Sanyo 2SK3491 Specifications

Ordering number : ENN6959

2SK3491

N-Channel Silicon MOSFET

2SK3491

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Low Qg.

Package Dimensions

unit : mm

2083B

[2SK3491]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

1.5

5.5

1.6

Package Dimensions

unit : mm

2092B

[2SK3491]

6.5

5.0

4

1.55.5

7.0

7.5

2.3

2.3

0.5

1.2

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

0.5

7.0

2.5

0.5

1.2
0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52101 TS IM TA-3255

No.6959-1/4

2SK3491

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS

GSS

D

DP

D

PW≤10µs, duty cycle≤1% 4.0 A

Tc=25°C20W

Electrical Characteristics at Ta=25°C

600 V
±30 V

1.0 A

1.0 W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) VDS=10V, ID=0.5A 8.5 11 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 135 pF
Output Capacitance Coss VDS=20V , f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 20 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=1.0A 6 nC
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





r

f

SD

=1mA, VGS=0 600 V
VDS=600V, VGS=0 100 µA
VGS=±30V, VDS=0 ±100 nA

VDS=10V, ID=0.5A 430 850 mS

See specified Test Circuit 7 ns

See specified Test Circuit 30 ns
IS=1.0A, VGS=0 0.83 1.2 V

Ratings

min typ max

Marking : K3491

Switching Time Test Circuit

V

IN

10V

0V

PW=1µs
D.C.≤0.5%

V

VDD=200V

ID=0.5A

RL=400Ω

D

IN

G

V

OUT

Unit

I

D

-- V

R

GS

50Ω

DS

20.0V

P.G

2.0

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0 5 10 15 20

Drain-to-Source V oltage, VDS -- V

2SK3491

S

ID -- V

1.6

VDS=10V

10.0V

6.0V

5.5V

5.0V

VGS=4.5V

IT02865 IT02866

1.4

1.2

-- A

1.0

D

0.8

0.6

Drain Current, I

0.4

0.2

0

0 5 10 15 20

Gate-to-Source V oltage, VGS -- V

GS

Tc= --25°C

25°C

°

75

No.6959-2/4

C