Sanyo 2SK3491 Specifications

Ordering number : ENN6959

2SK3491

N-Channel Silicon MOSFET

2SK3491

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Low Qg.

Package Dimensions

unit : mm

2083B

[2SK3491]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

1.5

5.5

1.6

Package Dimensions

unit : mm

2092B

[2SK3491]

6.5

5.0

4

1.55.5

7.0

7.5

2.3

2.3

0.5

1.2

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

0.5

7.0

2.5

0.5

1.2
0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52101 TS IM TA-3255

No.6959-1/4

2SK3491

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS

GSS

D

DP

D

PW≤10µs, duty cycle≤1% 4.0 A

Tc=25°C20W

Electrical Characteristics at Ta=25°C

600 V
±30 V

1.0 A

1.0 W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.5 3.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) VDS=10V, ID=0.5A 8.5 11 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 135 pF
Output Capacitance Coss VDS=20V , f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 20 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=1.0A 6 nC
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





r

f

SD

=1mA, VGS=0 600 V
VDS=600V, VGS=0 100 µA
VGS=±30V, VDS=0 ±100 nA

VDS=10V, ID=0.5A 430 850 mS

See specified Test Circuit 7 ns

See specified Test Circuit 30 ns
IS=1.0A, VGS=0 0.83 1.2 V

Ratings

min typ max

Marking : K3491

Switching Time Test Circuit

V

IN

10V

0V

PW=1µs
D.C.≤0.5%

V

VDD=200V

ID=0.5A

RL=400Ω

D

IN

G

V

OUT

Unit

I

D

-- V

R

GS

50Ω

DS

20.0V

P.G

2.0

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0 5 10 15 20

Drain-to-Source V oltage, VDS -- V

2SK3491

S

ID -- V

1.6

VDS=10V

10.0V

6.0V

5.5V

5.0V

VGS=4.5V

IT02865 IT02866

1.4

1.2

-- A

1.0

D

0.8

0.6

Drain Current, I

0.4

0.2

0

0 5 10 15 20

Gate-to-Source V oltage, VGS -- V

GS

Tc= --25°C

25°C

°

75

No.6959-2/4

C

25

RDS(on) -- V

GS

0.5A0.1A

20

(on) -- Ω

DS

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

ID=1.0A

Gate-to-Source V oltage, VGS -- V

5

4

(off) -- V

3

GS

2

1

Cutoff V oltage, V

0

--50 0 50 100 150

VGS(off) -- Tc

Case Temperature, Tc -- °C

10

7
5

3
2

1.0
7
5

-- A
F

3
2

0.1
7
5

3
2

0.01

Forward Current, I

7
5

3
2

0.001

IF -- V

0.4 0.6 0.8 1.0 1.2 1.40.20

°C

25°C

Tc=75

°

--25

SD

C

Diode Forward V oltage, VSD -- V

1000

7
5

3
2

100

7
5

3
2

10

7

Ciss, Coss, Crss -- pF

5
3

2

1.0
0 5 10 15 20 25 30 35

Ciss, Coss, Crss -- V

Ciss

Coss

Crss

Drain-to-Source V oltage, VSD -- V

Tc=25°C

VDS=10V
ID=1mA

DS

2SK3491

IT02867

IT02869

VGS=0

IT02871

f=1MHz

IT02873

20

ID=0.5A

18

VGS=10V

16

14

(on) -- Ω

DS

12

10

8

6

4

Static Drain-to-Source

On-State Resistance, R

2

0

--50 --25 0 25 50 75 100

RDS(on) -- Tc

Case Temperature, Tc -- °C

y

fs -- I



°

Tc= --25

C

°

75

C

°

25

23 57

Forward Transfer Admittance, yfs -- S

1.0

0.1

3

2

7
5

3

2

7

0.1

Drain Current, ID -- A

SW Time -- I

t

f

t

(off)

d

td(on)

t

r

23 57

Switching Time, SW Time -- ns

1000

100

1.0

7
5

3
2

7
5

3
2

10

7
5

3
2

Drain Current, I

10

7

IDP=4A

5
3

2

ID=1A

-- A

1.0
7

D

5
3

2

0.1
7

Operation in this area

Drain Current, I

5

is limited by RDS(on).

3

Tc=25°C

2

Single pulse

0.01

Forward Bias A S O

23 57

10

23 57

Drain-to-Source V oltage, V

C

D

DC operation

D

1.0

D

1.00.1

-- A

100ms

1001.0

DS

VDS=10V

VDD=200V
VGS=10V

≤10µs

100µs

1ms

10ms

23

-- V

No.6959-3/4

125 150

IT02868

23

IT02870

23

IT02872

57

1000

IT02874

1.4

2SK3491

P

D

-- Ta

30

P

-- Tc

D

1.2

-- W
D

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Amibient Temperature, Ta -- °C

IT02876

25

-- W
D

20

15

10

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

IT02875

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.

No.6959-4/4

PS