Sanyo 2SK3488 Specifications

Ordering number : ENN7181

Preliminary

2SK3481

N-Channel Silicon MOSFET

2SK3488

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2062A

[2SK3488]

4.5

1.6

0.4

0.5

2

3

1.5

3.0

(Bottom view)

0.75

1

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source

Specifications

SANYO : PCP

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 10 A
Mounted on a ceramic board (250mm
T c=25°C 3.5 W

2

✕0.8mm) 1.0 W

30 V

±20 V

2.5 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=1.3A, VGS=10V 125 160 mΩ
RDS(on)2 ID=0.7A, VGS=4V 200 280 mΩ

=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1.3A 1.6 2.3 S



Marking : LE Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3526

No.7181-1/4

2SK3481

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 120 pF
Output Capacitance Coss VDS=10V , f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.5A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.5A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.5A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 5 ns

r

See specified Test Circuit. 5 ns

f

IS=2.5A, VGS=0 0.9 1.2 V

Switching Time Test Circuit

10V

0V

PW=10µs
D.C .≤1%

V

IN

V

IN

VDD=15V

ID=1.3A
RL=11.5Ω

D

G

V

OUT

Ratings

min typ max

Unit

P.G

3.0

2.5

-- A

2.0

D

1.5

1.0

5V

6V

8V

10V

I

D

-- V

4V

50Ω

DS

S

=3V

V

GS

Drain Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0

Drain-to-Source V oltage, V

400

350

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

ID=0.7A

0

012345678910

RDS(on) -- V

1.3A

Gate-to-Source V oltage, V

DS

GS

GS

-- V

-- V

2SK3488

IT02698

Tc=25°C

IT04292

I

-- V

-- A

3.0

VDS=10V

2.5

2.0

D

GS

D

1.5

1.0

Drain Current, I

0.5

--25°C

Tc=75°C

GS

=4V

GS

25°C

GS

=10V

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Gate-to-Source V oltage, V

300

250

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60 --40 - -20 0 20 40 60 80 100 120 160140

RDS(on) -- Tc

=0.7A, V

I

D

=1.3A, V

I

D

Case Temperature, Tc -- °C

Tc= --25°C

-- V

25°C

75°C

IT04291

IT04293

No.7181-2/4