Sanyo 2SK3488 Specifications

Ordering number : ENN7181

2SK3481

N-Channel Silicon MOSFET

2SK3488

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

•Low ON-resistance.

•Ultrahigh-speed switching.

•4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

unit : mm

2062A

0.4

[2SK3488]

4.5

	1.6			1.5
		2.5	4.25max
	0.5	1.0
3 1.5	2	1		0.4
	3.0
(Bottom view)			1	: Gate
0.75			2	: Drain
			3	: Source

SANYO : PCP

Parameter	Symbol	Conditions				Ratings			Unit
Drain-to-Source Voltage	VDSS						30		V
Gate-to-Source Voltage	VGSS						±20		V
Drain Current (DC)	ID						2.5		A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					10		A
Allowable Power Dissipation	PD	Mounted on a ceramic board (250mm2 0.8mm)					1.0		W
		Tc=25°C					3.5		W
Channel Temperature	Tch						150		°C
Storage Temperature	Tstg						--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions				Ratings			Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		30					V
Zero-Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0						1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0						±10	mA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA		1.2				2.6	V
Forward Transfer Admittance	½yfs½	VDS=10V, ID=1.3A		1.6		2.3			S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=1.3A, VGS=10V				125		160	mW
	RDS(on)2	ID=0.7A, VGS=4V				200		280	mW
Marking : LE						Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3526 No.7181-1/4

2SK3481

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=10V, f=1MHz			120		pF
Output Capacitance	Coss	VDS=10V, f=1MHz			30		pF
Reverse Transfer Capacitance	Crss	VDS=10V, f=1MHz			15		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.			6		ns
Rise Time	tr	See specified Test Circuit.			5		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			17		ns
Fall Time	tf	See specified Test Circuit.			5		ns
Total Gate Charge	Qg	VDS=10V, VGS=10V, ID=2.5A			3.6		nC
Gate-to-Source Charge	Qgs	VDS=10V, VGS=10V, ID=2.5A			0.6		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=10V, VGS=10V, ID=2.5A			0.5		nC
Diode Forward Voltage	VSD	IS=2.5A, VGS=0			0.9	1.2	V

Switching Time Test Circuit

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

3.0

2.5

2.0

1.5

1.0

0.5

0

0

400

350

300

250

200

150

100

50

VIN	VDD=15V
10V
0V
	VIN	ID=1.3A
		RL=11.5Ω
PW=10μs	D	VOUT
D.C.≤ 1%
	G
	50Ω	2SK3488
P.G		S

ID -- VDS

5V

6V

8V

10V

4V

V	=3V
GS

0.2	0.4	0.6	0.8	1.0
Drain-to-Source Voltage, VDS -- V				IT02698
	RDS(on) -- VGS

Tc=25°C

ID=0.7A 1.3A

0

0	1	2	3	4	5	6	7	8	9	10
		Gate-to-Source Voltage, VGS						-- V	IT04292

	3.0										ID -- VGS
			VDS=10V																								C						C
																											°
																											25					°
																																25
	2.5																									Tc=	--		°		C
																													75
A
--	2.0
D
I
Current,	1.5
Drain	1.0
																								C
																			C				°
																Tc=75		°					25
	0.5																					--		C
																						25	°
	0
	0			0.5				1.0		1.5			2.0						2.5					3.0						3.5				4.0
							Gate-to-Source Voltage, VGS -- V																									IT04291
	300									RDS(on) -- Tc
mΩ	250
--																	=4V
(on)	200										=0
														VGS
DS												.7A,
										ID
Source-to-DrainStatic Resistance,State-OnR
	150																		=10V
													.3A,			VGS
										I			=1
											D
	100
	50
	0
	--60			--40 --20				0		20			40			60 80								100			120					140		160
									Case Temperature, Tc --															°C								IT04293

No.7181-2/4