Sanyo 2SK3485 Specifications

Ordering number : ENN7180

Preliminary

2SK3485

N-Channel Silicon MOSFET

2SK3485

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Package Dimensions

unit : mm

2062A

[2SK3485]

4.5

1.6

0.4

0.5

2

3

1.5

3.0

(Bottom view)

0.75

1

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source

Specifications

SANYO : PCP

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 10 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W

2

✕0.8mm) 1.0 W

20 V

±10 V

2.5 A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=1.3A, VGS=4V 110 140 mΩ
RDS(on)2 ID=0.7A, VGS=2.5V 140 195 mΩ

=1mA, VGS=0 20 V
VDS=20V, VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1.3A 2.8 4.0 S



Marking : LB Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3524

No.7180-1/4

2SK3485

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V, f=1MHz 190 pF
Output Capacitance Coss VDS=10V, f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=2.5A 2.7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=2.5A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=2.5A 0.6 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 33 ns

r

See specified Test Circuit. 21 ns

f

IS=2.5A, VGS=0 0.92 1.2 V

Switching Time Test Circuit

V
4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

VDD=10V

ID=1.3A
RL=7.69Ω

D

G

V

OUT

Ratings

min typ max

Unit

P.G

2.0

1.8

4.0V

1.6

3.0V

1.4

-- A
D

1.2

1.0

6.0V

0.8

0.6

Drain Current, I

0.4

0.2
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

2.0V

2.5V

Drain-to-Source V oltage, V

300

250

RDS(on) -- V

I

D

-- V

50Ω

DS

DS

GS

S

=1.5V

V

GS

-- V

2SK3485

IT02687

Tc=25°C

I

-- V

D

GS

-- A

3.0

2.5

2.0

VDS=10V

D

1.5

1.0

Drain Current, I

0.5

0

0 0.4 0.8 1.2 1.6 2.0

Gate-to-Source V oltage, V

250

200

RDS(on) -- Tc

Tc=75°C

--25°C

GS

25°C

-- V

Tc= --25°C

--25°C

75°C

IT04282

(on) -- mΩ

200

DS

ID=0.7A

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

012345678910

1.3A

Gate-to-Source V oltage, V

GS

-- V

IT04283

(on) -- mΩ

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

- -60

--40 --20 0 20 40 60 80 100 120 160140

=2.5V

GS

=0.7A, V

I

D

=1.3A, V

I

D

GS

=4.0V

Case Temperature, Tc -- °C

IT04284

No.7180-2/4