SANYO 2SK3449 Datasheet

Ordering number : ENN6672

2SK3449

N-Channel Silicon MOSFET

2SK3449

DC / DC Converter Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 19.2 A

Tc=25°C10W

Package Dimensions

unit : mm

2190

[2SK3449]

8.0

4.0

1.0

1.6

0.8

0.8

0.75

2.4

1.0

1

2

4.8

1.4

3.0

11.0

7.5

1.5

3.0

15.5

3

1.7

3.3

0.7

1 : Source
2 : Drain
3 : Gate

SANYO : TO-126ML

60 V

±20 V

4.8 A

1W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V

(BR)DSSID

DSS
GSS

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22201 TS IM TA-2919

No.6672-1/4

Unit

2SK3449

Continued from preceding page.

Parameter Symbol Conditions
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 110 pF

Output Capacitance Coss VDS=20V , f=1MHz 35 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 10 pF
Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 16 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=4.8A 4.5 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4.8A 0.9 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4.8A 0.8 nC
Diode Forward Voltage V

yfs



RDS(on)1 ID=2.4A, VGS=10V 240 320 mΩ
RDS(on)2 ID=2.4A, VGS=4V 320 440 mΩ

SD

VDS=10V, ID=2.4A 2.2 3.2 S



See specified Test Circuit 3.2 ns

r

See specified Test Circuit 4.8 ns

f

IS=4.8A, VGS=0 1 1.2 V

Switching Time Test Circuit

VDD=30V

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID=2.4A

RL=12.5Ω

V

OUT

Ratings

min typ max

Unit

P.G

1.6

1.4

1.2

5.0V

4.0V

3.5V

10.0V

-- A

1.0

D

0.8

0.6

Drain Current, I

0.4

0.2

0

0

0.4

Drain-to-Source V oltage, VDS -- V

800

700

600

(on) -- mΩ

500

DS

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

024681012

RDS(on) -- V

Gate-to-Source V oltage, VGS -- V

I

50Ω

D

-- V

DS

S

2SK3449

8.0V

3.0V

=2.5V

V

GS

0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

GS

Tc=25°C

ID=2.4A

14 16 18 20

IT01212

IT01214

I

-- V

3.5

VDS=10V

3.0

2.5

-- A
D

2.0

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 4.03.5

D

Gate-to-Source V oltage, VGS -- V

600

500

400

(on) -- mΩ

DS

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

- -60

- -40 - -20 0 20 40 60 80 100 120 140 160

RDS(on) -- Tc

GS

=2.4A, V

I

D

=2.4A, V

I

D

Case Temperature, Tc -- °C

GS

=4V

GS

Tc=75°C

- -25°C

=10V

25°C

IT01213

IT01215

No.6672-2/4