SANYO 2SK3448 Datasheet

Ordering number : ENN6785

2SK3448

N-Channel Silicon MOSFET

2SK3448

Ultrahigh-Speed Switching Use

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

• Meets radial taping.

Package Dimensions

unit : mm

2087A

[2SK3448]

6.9

4.5

1.01.0

0.6

0.9

123

0.5

2.5

1.45

1.0

1.0

4.0

0.45

1 : Source
2 : Drain

Specifications

2.54

2.54

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 10 A

3 : Gate
SANYO : NMP

60 V

±20 V

2.5 A

1W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1.5A, VGS=10V 115 150 mΩ
RDS(on)2 ID=1.0A, VGS=4V 150 210 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 2.7 3.8 S

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1500 TS IM TA-2921

No.6785-1/4

Unit

2SK3448

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 220 pF
Output Capacitance Coss VDS=20V , f=1MHz 75 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 28 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.5A 8.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.5A 1.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.5A 1.8 nC
Diode Forward Voltage V

SD

See specified Test Circuit 8 ns

r

See specified Test Circuit 16 ns

f

IS=2.5A, VGS=0 0.83 1.2 V

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=1.5A

RL=20Ω

V

OUT

Ratings

min typ max

Unit

P.G

3.5

6.0V

3.0

8.0V

2.5

-- A
D

2.0

10.0V

1.5

1.0

Drain Current, I

0.5

0

0

250

200

ID=1.0A

(on) -- mΩ

DS

150

100

50Ω

I

D

-- V

DS

2SK3448

S

5.0V

3.0V

4.0V

3.5V

0.4

0.8 1.2 1.6 2.00.2 0.6 1.0 1.4 1.8

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

1.5A

V

GS

=2.5V

IT01245

Ta=25°C

I

-- V

-- A
D

6

VDS=10V

5

4

3

2

D

GS

Drain Current, I

1

Ta=75°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

25°C

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Ta

=4V

GS

=1.0A, V

I

D

I

D

=1.5A, V

GS

=10V

(on) -- mΩ

300

250

200

DS

150

100

- -25°C

IT01246

50

Static Drain-to-Source

On-State Resistance, R

0

0 2 4 6 8 10 12

Gate-to-Source V oltage, VGS -- V

14 16 18 20

IT01247

50

Static Drain-to-Source

On-State Resistance, R

0

- -60

- -40 --20 0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

IT01248

No.6785-2/4