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Ordering number : ENN7153
2SK3415LS
N-Channel Silicon MOSFET
2SK3415LS
DC / DC Converter, Motor Driver Applications
Features
•
Low ON-resistance.
•
4V drive.
Package Dimensions
unit : mm
2078C
[2SK3415LS]
10.0
16.1
3.6
123
0.9
0.75
3.2
3.5
1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 160 A
Tc=25°C35W
2.55
2.55
4.5
2.8
7.2
16.0
0.6
1.2
14.0
0.7
1 : Gate
2.4
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
60 V
±20 V
40 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=20A, VGS=10V 13 17 mΩ
RDS(on)2 ID=20A, VGS=4V 17 24 mΩ
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=20A 30 42 S
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3299
No.7153-1/4
Unit
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2SK3415LS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=20V , f=1MHz 3000 pF
Output Capacitance Coss VDS=20V , f=1MHz 600 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 180 pF
Turn-ON Delay Time td(on) ID=18A, VGS=10V, VDD=30V, RGS=50Ω 23 ns
Rise Time t
Turn-OFF Delay Time td(off) ID=18A, VGS=10V, VDD=30V, RGS=50Ω 290 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=40A 89 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=40A 10 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=40A 22 nC
Diode Forward Voltage V
SD
ID=18A, VGS=10V, VDD=30V, RGS=50Ω 140 ns
r
ID=18A, VGS=10V, VDD=30V, RGS=50Ω 120 ns
f
IS=40A, VGS=0 0.9 1.2 V
min typ max
Switching Time Test Circuit
VDD=30V
V
IN
10V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=20A
RL=1.5Ω
V
OUT
Ratings
Unit
P.G
40
35
8.0V
30
-- A
25
D
Drain Current, I
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
10.0V
20
15
10
5
0
0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0
40
35
30
25
DS
20
15
10
5
0
024 86 101214161820
50Ω
I
D
3.5V
6.0V
4.0V
5.0V
Drain-to-Source V oltage, V
RDS(on) -- V
Gate-to-Source V oltage, V
-- V
S
DS
2SK3415LS
VGS=3.0V
-- V
DS
GS
-- V
GS
IT04135
Tc=25°C
ID=20A
IT04137
I
-- V
D
=20A, V
25°C
GS
GS
GS
=4V
=10V
Tc=75°C
GS
- -25°C
-- V
90
80
70
-- A
60
D
50
40
30
Drain Current, I
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source V oltage, V
30
25
20
(on) -- mΩ
DS
15
10
5
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140
RDS(on) -- Tc
=20A, V
I
D
I
D
Case Temperature, Tc -- °C
VDS=10V
°C
75°C
Tc= --25
IT04136
IT04138
No.7153-2/4
25°C