SANYO 2SK3415LS Datasheet

Ordering number : ENN7153

2SK3415LS

N-Channel Silicon MOSFET

2SK3415LS

DC / DC Converter, Motor Driver Applications

Features

•

Low ON-resistance.

•

4V drive.

Package Dimensions

unit : mm

2078C

[2SK3415LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

1.2

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 160 A

Tc=25°C35W

2.55

2.55

4.5

2.8

7.2

16.0

0.6

1.2

14.0

0.7

1 : Gate

2.4

2 : Drain
3 : Source

SANYO : TO-220FI(LS)

60 V

±20 V

40 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=20A, VGS=10V 13 17 mΩ
RDS(on)2 ID=20A, VGS=4V 17 24 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=20A 30 42 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-3299

No.7153-1/4

Unit

2SK3415LS

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 3000 pF
Output Capacitance Coss VDS=20V , f=1MHz 600 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 180 pF
Turn-ON Delay Time td(on) ID=18A, VGS=10V, VDD=30V, RGS=50Ω 23 ns
Rise Time t
Turn-OFF Delay Time td(off) ID=18A, VGS=10V, VDD=30V, RGS=50Ω 290 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=40A 89 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=40A 10 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=40A 22 nC
Diode Forward Voltage V

SD

ID=18A, VGS=10V, VDD=30V, RGS=50Ω 140 ns

r

ID=18A, VGS=10V, VDD=30V, RGS=50Ω 120 ns

f

IS=40A, VGS=0 0.9 1.2 V

min typ max

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=20A
RL=1.5Ω

V

OUT

Ratings

Unit

P.G

40

35

8.0V

30

-- A

25

D

Drain Current, I

(on) -- mΩ

Static Drain-to-Source

On-State Resistance, R

10.0V

20

15

10

5

0

0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0

40

35

30

25

DS

20

15

10

5

0

024 86 101214161820

50Ω

I

D

3.5V

6.0V

4.0V

5.0V

Drain-to-Source V oltage, V

RDS(on) -- V

Gate-to-Source V oltage, V

-- V

S

DS

2SK3415LS

VGS=3.0V

-- V

DS

GS

-- V

GS

IT04135

Tc=25°C
ID=20A

IT04137

I

-- V

D

=20A, V

25°C

GS

GS

GS

=4V

=10V

Tc=75°C

GS

- -25°C

-- V

90

80

70

-- A

60

D

50

40

30

Drain Current, I

20

10

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Gate-to-Source V oltage, V

30

25

20

(on) -- mΩ

DS

15

10

5

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

RDS(on) -- Tc

=20A, V

I

D

I

D

Case Temperature, Tc -- °C

VDS=10V

°C

75°C

Tc= --25

IT04136

IT04138

No.7153-2/4

25°C