SANYO 2SK3414LS Datasheet

Ordering number : ENN7152

2SK3414LS

N-Channel Silicon MOSFET

2SK3414LS

DC / DC Converter Applications

Features

•

Low ON-resistance.

•

4V drive.

Package Dimensions

unit : mm

2078C

[2SK3414LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

1.2

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 120 A

Tc=25°C25W

2.55

2.55

4.5

2.8

7.2

16.0

0.6

1.2

14.0

0.7

1 : Gate

2.4

2 : Drain
3 : Source

SANYO : TO-220FI(LS)

60 V

±20 V

30 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=15A, VGS=10V 20 26 mΩ
RDS(on)2 ID=15A, VGS=4V 26 36 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=15A 21 29 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-3298

No.7152-1/4

Unit

2SK3414LS

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 1700 pF
Output Capacitance Coss VDS=20V , f=1MHz 380 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 110 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 16 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 190 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=30A 52 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=30A 6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=30A 12 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 100 ns

r

See specified Test Circuit. 90 ns

f

IS=30A, VGS=0 0.96 1.2 V

min typ max

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=15A
RL=2Ω

V

OUT

Ratings

Unit

P.G

30

50Ω

I

D

-- V

S

DS

2SK3414LS

3.0V

25

-- A

20

D

15

10

6.0V

8.0V

10.0V

3.5V

4.0V

2.5V

Drain Current, I

5

0

0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source V oltage, V

60

50

RDS(on) -- V

DS

GS

-- V

VGS=2.0V

IT04123

Tc=25°C
ID=10A

I

-- V

70

60

50

-- A
D

40

30

20

Drain Current, I

10

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

D

Gate-to-Source V oltage, V

50

40

RDS(on) -- Tc

25°C

GS

Tc=75°C

- -25°C

GS

-- V

VDS=10V

°C

Tc= --25

75°C

IT04124

25°C

(on) -- mΩ

40

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

024 86 101214161820

Gate-to-Source V oltage, V

GS

-- V

IT04125

(on) -- mΩ

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

=10A, V

I

D

=10A, V

I

D

GS

GS

=4V

=10V

Case Temperature, Tc -- °C

IT04126

No.7152-2/4