SANYO 2SK3413LS Datasheet

Ordering number : ENN7151

2SK3413LS

N-Channel Silicon MOSFET

2SK3413LS

DC / DC Converter Applications

Features

•

Low ON-resistance.

•

4V drive.

Package Dimensions

unit : mm

2078C

[2SK3413LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

1.2

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 100 A

Tc=25°C25W

2.55

2.55

4.5

2.8

7.2

16.0

0.6

1.2

14.0

0.7

1 : Gate

2.4

2 : Drain
3 : Source

SANYO : TO-220FI(LS)

60 V

±20 V

25 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=12A, VGS=10V 25 33 mΩ
RDS(on)2 ID=12A, VGS=4V 35 49 mΩ

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V , VDS=0 ±10 µA

VDS=10V, ID=12A 16 23 S

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11502 TS IM T A-3297

No.7151-1/4

Unit

2SK3413LS

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 1000 pF
Output Capacitance Coss VDS=20V , f=1MHz 280 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 100 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 120 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=25A 34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=25A 5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=25A 8 nC
Diode Forward Voltage V

SD

See specified Test Circuit. 72 ns

r

See specified Test Circuit. 90 ns

f

IS=25A, VGS=0 0.93 1.2 V

min typ max

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=12A
RL=2.5Ω

V

OUT

Ratings

Unit

P.G

25

20

8.0V

6.0V

50Ω

I

4.0V

5.0V

D

-- V

S

DS

2SK3413LS

3.5V

-- A
D

15

10.0V

10

3.0V

Drain Current, I

5

VGS=2.5V

0

0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source V oltage, V

80

70

RDS(on) -- V

DS

GS

-- V

IT04111

Tc=25°C
ID=12A

I

-- V

50

VDS=10V

45

40

35

-- A
D

30

25

20

15

Drain Current, I

10

5
0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

D

Gate-to-Source V oltage, V

80

70

RDS(on) -- Tc

25°C

GS

Tc=75°C

- -25°C

GS

Tc= --25

-- V

°C

25°C

75°C

IT04112

60

(on) -- mΩ

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

024 86 101214161820

Gate-to-Source V oltage, V

GS

-- V

IT04113

60

(on) -- mΩ

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140

=12A, V

I

D

=12A, V

I

D

GS

GS

=4V

=10V

Case Temperature, Tc -- °C

IT04114

No.7151-2/4