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Ordering number : ENN7151
2SK3413LS
N-Channel Silicon MOSFET
2SK3413LS
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
4V drive.
Package Dimensions
unit : mm
2078C
[2SK3413LS]
10.0
16.1
3.6
123
0.9
0.75
3.2
3.5
1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 100 A
Tc=25°C25W
2.55
2.55
4.5
2.8
7.2
16.0
0.6
1.2
14.0
0.7
1 : Gate
2.4
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
60 V
±20 V
25 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=12A, VGS=10V 25 33 mΩ
RDS(on)2 ID=12A, VGS=4V 35 49 mΩ
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS=±16V , VDS=0 ±10 µA
VDS=10V, ID=12A 16 23 S
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3297
No.7151-1/4
Unit
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2SK3413LS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=20V , f=1MHz 1000 pF
Output Capacitance Coss VDS=20V , f=1MHz 280 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 100 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 120 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=25A 34 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=25A 5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=25A 8 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 72 ns
r
See specified Test Circuit. 90 ns
f
IS=25A, VGS=0 0.93 1.2 V
min typ max
Switching Time Test Circuit
VDD=30V
V
IN
10V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=12A
RL=2.5Ω
V
OUT
Ratings
Unit
P.G
25
20
8.0V
6.0V
50Ω
I
4.0V
5.0V
D
-- V
S
DS
2SK3413LS
3.5V
-- A
D
15
10.0V
10
3.0V
Drain Current, I
5
VGS=2.5V
0
0 0.2 0.4 0.80.6 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source V oltage, V
80
70
RDS(on) -- V
DS
GS
-- V
IT04111
Tc=25°C
ID=12A
I
-- V
50
VDS=10V
45
40
35
-- A
D
30
25
20
15
Drain Current, I
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
D
Gate-to-Source V oltage, V
80
70
RDS(on) -- Tc
25°C
GS
Tc=75°C
- -25°C
GS
Tc= --25
-- V
°C
25°C
75°C
IT04112
60
(on) -- mΩ
50
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
024 86 101214161820
Gate-to-Source V oltage, V
GS
-- V
IT04113
60
(on) -- mΩ
50
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140
=12A, V
I
D
=12A, V
I
D
GS
GS
=4V
=10V
Case Temperature, Tc -- °C
IT04114
No.7151-2/4