Sanyo 2SK3335 Specifications

Ordering number : ENN7216

2SK3335

N-Channel Silicon MOSFET

2SK3335

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

4V drive.

Package Dimensions

unit : mm

2083B

[2SK3335]

6.5

unit : mm

2092B

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

6.5

5.0

0.8

[2SK3335]

1.55.5

1.5

5.5

1.6

2.3

0.5

7.0

1.2

7.5

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

2.3

0.5

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2
0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

50902 TS IM TA-2237

No.7216-1/4

2SK3335

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 32 A

Tc=25˚C 15 W

Electrical Characteristics at T a=25°C

60 V

±20 V

8A

1W

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 220 pF

Output Capacitance Coss VDS=20V , f=1MHz 75 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 8 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 1.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 2 nC
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





RDS(on) ID=4A, VGS=10V 115 150 mΩ
RDS(on) ID=4A, VGS=4V 150 210 mΩ

r

f

SD

=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS= ±16V, VDS=0 ±10 µA

VDS=10V , ID=4A 3.8 5.5 S

See specified Test Circuit. 15 ns

See specified Test Circuit. 15 ns

IS=8A, VGS=0 0.95 1.2 V

Ratings

min typ max

Switching Time Test Circuit

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

VDD=30V

ID=4A
RL=7.5Ω

D

G

V

OUT

Unit

P.G

50Ω

2SK3335

S

No.7216-2/4

I

-- V

D

10

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2

1
0

0 0.2 0.4 0.6 0.8 1.21.0

DS

10.0V

Drain-to-Source V oltage, V

RDS(on) -- V

-- mΩ

(on)

DS

400

350

300

250

200

8.0V

6.0V

5.0V

4.0V

3.0V

VGS=2.5V

-- V

DS

GS

IT04480

Tc=25°C

ID=4A

2SK3335

18

16

14

-- A

12

D

10

8

6

Drain Current, I

4

2

0

400

350

-- mΩ

300

(on)

250

DS

200

I

-- V

D

2301 4 756

Drain-to-Source V oltage, V

GS

Tc= --25°C

GS

75°C

-- V

RDS(on) -- Tc

25°C

IT04481

ID=4A
VGS=4V

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

-- S

Forward Transfer Admittance, | yfs |

Gate-to-Source V oltage, V

| yfs |

-- I

Tc= --25°C

25°C

75°C

10

VDS=10V

7
5

3
2

1.0
7
5

3
2

0.1
7
5

3
2

0.01
23 57 23 57 23 57 23 57

0.001

0.01 0.1 1.0 10

-- V

GS

D

Drain Current, ID -- A

7
5

3
2

Ciss, Coss, Crss -- V

Ciss

DS

150

100

Static Drain-to-Source

On-State Resistance, R

50

0

--60 --40 --20 0 20 40 60 80 100 120 140

IT04482

3

VGS=0

2

10

7
5

-- A

3

F

2

1.0
7
5

3
2

0.1
7
5

Forward Drain Current, I

3
2

0.01

0.2 0.4 0.6 0.8 1.0 1.2

IT04484 IT04485

f=1MHz

12

Case Temperature, Tc -- °C

I

-- V

F

SD

25°C

Tc=75°C

--25°C

Diode Forward V oltage, V

V

-- Qg

GS

SD

-- V

VDS=10V
ID=8A

10

-- V
GS

8

IT04483

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0 10203040506070

Drain-to-Source V oltage, V

Coss

Crss

DS

-- V

IT04486

6

4

2

Gate-to-Source V oltage, V

0

012345678

Total Gate Charge, Gg -- nC

No.7216-3/4

IT04487

2SK3335

Switching Time, SW Time -- ns

100

1.0

2

7
5

3
2

10

7
5

3
2

23 57 23 57 23

SW Time -- I

t

(off)

d

t

f

t

(on)

d

t

r

D

Drain Current, ID -- A

P

-- Ta

1.2

1.0

-- W
D

0.8

0.6

0.4

0.2

D

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

VDD=30V
VGS=10V

101.00.1

IT04488

IT04491

7
5

IDP=32A

3
2

ID=8A

10

7
5

3

-- A
D

2

1.0
7
5

3
2

Drain Current, I

0.1
7

5
3

Tc=25°C

2

Single pulse

0.01
23 57 23 57 23 57 23 57

Operation in this
area is limited by RDS(on).

A S O

10ms

100ms

DC operation

10 1001.00.10.01

Drain-to-Source V oltage, VDS -- V

P

-- Tc

20

18

16

-- W
D

15
14

12

10

8

6

4

2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

D

Case Temperature, Tc -- °C

<10µs

100µs

1ms

IT04489

IT04490

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of May, 2002. Specifications and information herein are subject
to change without notice.

No.7216-4/4

PS