Sanyo 2SK3335 Specifications
Ordering number : ENN7216
2SK3335
N-Channel Silicon MOSFET
2SK3335
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
4V drive.
Package Dimensions
unit : mm
2083B
[2SK3335]
6.5
unit : mm
2092B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
6.5
5.0
0.8
[2SK3335]
1.55.5
1.5
5.5
1.6
2.3
0.5
7.0
1.2
7.5
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2.3
0.5
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
50902 TS IM TA-2237
No.7216-1/4
2SK3335
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 32 A
Tc=25˚C 15 W
Electrical Characteristics at T a=25°C
60 V
±20 V
8A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 220 pF
Output Capacitance Coss VDS=20V , f=1MHz 75 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=8A 8 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=8A 1.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=8A 2 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on) ID=4A, VGS=10V 115 150 mΩ
RDS(on) ID=4A, VGS=4V 150 210 mΩ
r
f
SD
=1mA, VGS=0 60 V
VDS=60V , VGS=0 10 µA
VGS= ±16V, VDS=0 ±10 µA
VDS=10V , ID=4A 3.8 5.5 S
See specified Test Circuit. 15 ns
See specified Test Circuit. 15 ns
IS=8A, VGS=0 0.95 1.2 V
Ratings
min typ max
Switching Time Test Circuit
10V
0V
PW=10µs
D.C.≤1%
V
IN
V
IN
VDD=30V
ID=4A
RL=7.5Ω
D
G
V
OUT
Unit
P.G
50Ω
2SK3335
S
No.7216-2/4
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