SANYO 2SK3293 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6345

2SK3293

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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D

D

Package Dimensions

unit:mm

2062A

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C

[2SK3293]

1.6

0.4

0.5

2

3

1.5

0.75

1

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

06V
02±V
3A
21A

5.1W

5.3W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,A5.1=

2)no(IDV,A1=

I

V,Am1=

D

V

SD

V

SG

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A5.1=6.26.3S

D

V01=511051mΩ

SG

V4=051012mΩ

SG

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Marking : KZ Continued on next page.

60800TS (KOTO) TA-2737 No.6345–1/4

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2SK3293

Continued from preceding page.

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r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A3=

S

Switching Time Test Circuit

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

VDD=30V

ID=1.5A

IN

G

RL=20Ω

D

V

OUT

zHM1=f,V02=022Fp
zHM1=f,V02=57Fp
zHM1=f,V02=52Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS92sn

V,V01=

SG

I,V01=

SG

D

0=38.02.1V

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6.8Cn

A3=

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2SK3293

S

DS

3.5

3.0

2.5

–A

D

2.0

1.5

P.G

8.0V

6.0V

10.0V

5.0V

4.0V

50Ω

I

D

3.5V

-- V

3.0V

VGS=2.5V

1.0

Drain Current, I

0.5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Drain-to-Source Voltage, VDS –V

250

RDS(on) -- V

GS

Tc=25°C

I

-- V

6

D

GS

VDS=10V

5

4

–A

D

3

2

Drain Current, I

1

Tc=75°C

25°C

--25°C

0

IT01457 IT01458

0 0.5 1.0 1.5 2.0 2.5 3.0

300

Gate-to-Source Voltage, VGS –V

RDS(on) -- Tc

3.5

mΩ

200

(on) –

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

024681012141618

ID=1.5A

1.0A

Gate-to-Source Voltage, VGS –V

IT01459

mΩ

250

(on) –

200

DS

=1.0A, V

I

150

100

50

Static Drain-to-Source

On-State Resistance, R

20

0

--60 --40 --20 0 20 40 60 80 100 120

D

I

D

Case Temperature, Tc – °C

GS

=1.5A, V

=4V

GS

=10V

160140

IT01460

No.6345–2/4