SANYO 2SK3292 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6414

2SK3292

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C

[2SK3292]

4.5

1.6

0.4

0.5

2

3

1.5

0.75

1

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

06V
02±V
2A
8A

5.1W

5.3W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A1=

)no(SD

2IDV,A1=

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A1=5.11.2S

D

V01=042023mΩ

SG

V4=023044mΩ

SG

nimpytxam

Marking : KY Continued on next page.

60800TS (KOTO) TA-2313 No.6414–1/4

sgnitaR

tinU

2SK3292

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 9.0Cn

egrahC"relliM"niarD-ot-etaGdgQ 8.0Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A2=

S

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

G

50Ω

ID=1A
RL=30Ω

D

S

V

2SK3292

OUT

zHM1=f,V02=011Fp
zHM1=f,V02=53Fp
zHM1=f,V02=01Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS11sn

V,V01=

SG

I,V01=

SG

D

0=58.02.1V

sgnitaR

nimpytxam

5.4Cn

A2=

tinU

2.0

1.6

–A

1.2

D

0.8

D

8.0V

5.0V

10.0V

4.0V

DS

3.5V

3.0V

I

-- V

Drain Current, I

0.4

=2.5V

V

GS

0

0 0.60.2 0.4 0.8 1.0 1.2 1.61.4 2.01.8

800

700

mΩ

600

–

500

DS(on)

400

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

010468 14212161820

Drain-to-Source Voltage, VDS –V

RDS(on) -- V

GS

Gate-to-Source Voltage, VGS –V

IT01270

Tc=25°C
ID=1A

IT01272

4.0

3.5

3.0

–A

2.5

D

2.0

1.5

D

VDS=10V

GS

I

-- V

°C

Drain Current, I

1.0

Tc=75

0.5

0

0 1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Gate-to-Source Voltage, VGS –V

600

500

mΩ
–

400

DS(on)

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

--60 40--40 --20 12020 60 80 100 1601400

RDS(on) -- Tc

=4V

GS

=1A, V

I

D

=1A, V

I

D

GS

=10V

Case Temperature, Tc – °C

°C

--25

25°C

IT01271

IT01273

No.6414–2/4