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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6414
2SK3292
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2062A
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C
[2SK3292]
4.5
1.6
0.4
0.5
2
3
1.5
0.75
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
06V
02±V
2A
8A
5.1W
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A1=
)no(SD
2IDV,A1=
)no(SD
I
V,Am1=
SSD)RB(
D
V
SD
V
SG
V
SD
0=06V
SG
V,V06=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01=
Am1=0.14.2V
D
A1=5.11.2S
D
V01=042023mΩ
SG
V4=023044mΩ
SG
nimpytxam
Marking : KY Continued on next page.
60800TS (KOTO) TA-2313 No.6414–1/4
sgnitaR
tinU
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2SK3292
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 9.0Cn
egrahC"relliM"niarD-ot-etaGdgQ 8.0Cn
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
V
SD
I
V,A2=
S
Switching Time Test Circuit
VDD=30V
V
IN
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
G
50Ω
ID=1A
RL=30Ω
D
S
V
2SK3292
OUT
zHM1=f,V02=011Fp
zHM1=f,V02=53Fp
zHM1=f,V02=01Fp
tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS42sn
tiucriCtseTdeificepseeS11sn
V,V01=
SG
I,V01=
SG
D
0=58.02.1V
sgnitaR
nimpytxam
5.4Cn
A2=
tinU
2.0
1.6
–A
1.2
D
0.8
D
8.0V
5.0V
10.0V
4.0V
DS
3.5V
3.0V
I
-- V
Drain Current, I
0.4
=2.5V
V
GS
0
0 0.60.2 0.4 0.8 1.0 1.2 1.61.4 2.01.8
800
700
mΩ
600
–
500
DS(on)
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
010468 14212161820
Drain-to-Source Voltage, VDS –V
RDS(on) -- V
GS
Gate-to-Source Voltage, VGS –V
IT01270
Tc=25°C
ID=1A
IT01272
4.0
3.5
3.0
–A
2.5
D
2.0
1.5
D
VDS=10V
GS
I
-- V
°C
Drain Current, I
1.0
Tc=75
0.5
0
0 1.00.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Gate-to-Source Voltage, VGS –V
600
500
mΩ
–
400
DS(on)
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 40--40 --20 12020 60 80 100 1601400
RDS(on) -- Tc
=4V
GS
=1A, V
I
D
=1A, V
I
D
GS
=10V
Case Temperature, Tc – °C
°C
--25
25°C
IT01271
IT01273
No.6414–2/4