SANYO 2SK3291 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6413

2SK3291

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C

[2SK3291]

1.6

0.4

0.5

2

3

1.5

0.75

1

3.0

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

06V
02±V

6.1A

4.6A

3.1W

5.3W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A8.0=

)no(SD

2IDV,A8.0=

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

0=06V

SG

V,V06=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A8.0=2.17.1S

D

V01=083005mΩ

SG

V4=005086mΩ

SG

nimpytxam

Marking : KX Continued on next page.

60800TS (KOTO) TA-1699 No.6413–1/4

sgnitaR

tinU

2SK3291

Continued from preceding page.

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emiTllaFt

egrahCetaGlatoTgQ

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egrahC"relliM"niarD-ot-etaGdgQ 5.0Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

S

Switching Time Test Circuit

VDD=30V

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

V

IN

G

50Ω

D

ID=0.8A
RL=37.5Ω

S

V

2SK3291

OUT

zHM1=f,V02=07Fp
zHM1=f,V02=02Fp
zHM1=f,V02=5Fp

tiucriCtseTdeificepseeS5sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS5sn

V,V01=

V,A6.1=

SG

I,V01=

SG

D

0=58.02.1V

sgnitaR

nimpytxam

6.3Cn

A6.1=

tinU

I

-- V

1.8

1.6

1.4

1.2

–A

D

1.0

0.8

0.6

Drain Current, I

0.4

0.2

0

00.60.2 0.4 0.8 1.0 1.2 1.61.4 2.01.8

8.0V

10.0V

D

6.0V

3.0V

Drain-to-Source Voltage, VDS –V

1400

1200

mΩ
–

1000

DS(on)

800

600

400

200

Static Drain-to-Source

On-State Resistance, R

0

010468 14212161820

RDS(on) -- V

Gate-to-Source Voltage, VGS –V

3.5V

DS

5.0V

4.0V

GS

=2.5V

V

GS

Tc=25°C
ID=0.8A

IT01258

IT01260

I

-- V

3.5

VDS=10V

3.0

2.5

–A

D

2.0

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

D

GS

Tc=75°C

°C

--25

25°C

Gate-to-Source Voltage, VGS –V

1000

mΩ

800

–

600

DS(on)

400

200

Static Drain-to-Source

On-State Resistance, R

0

--4 0--60 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Tc

=4V

GS

=0.8A, V

I

D

I

D

GS

=0.8A, V

=10V

Case Temperature, Tc – °C

IT01259

IT01261

No.6413–2/4