SANYO 2SK3291 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6413
2SK3291
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2062A
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Mounted on a ceramic board (250mm2×0.8mm)
Tc=25˚C
[2SK3291]
1.6
0.4
0.5
2
3
1.5
0.75
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
06V
02±V
6.1A
4.6A
3.1W
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A8.0=
)no(SD
2IDV,A8.0=
)no(SD
I
V,Am1=
SSD)RB(
D
V
SD
V
SG
V
SD
0=06V
SG
V,V06=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01=
Am1=0.14.2V
D
A8.0=2.17.1S
D
V01=083005mΩ
SG
V4=005086mΩ
SG
nimpytxam
Marking : KX Continued on next page.
60800TS (KOTO) TA-1699 No.6413–1/4
sgnitaR
tinU
2SK3291
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 6.0Cn
egrahC"relliM"niarD-ot-etaGdgQ 5.0Cn
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
V
SD
I
S
Switching Time Test Circuit
VDD=30V
V
IN
10V
0V
PW=10µs
D.C.≤1%
P.G
V
IN
G
50Ω
D
ID=0.8A
RL=37.5Ω
S
V
2SK3291
OUT
zHM1=f,V02=07Fp
zHM1=f,V02=02Fp
zHM1=f,V02=5Fp
tiucriCtseTdeificepseeS5sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS5sn
V,V01=
V,A6.1=
SG
I,V01=
SG
D
0=58.02.1V
sgnitaR
nimpytxam
6.3Cn
A6.1=
tinU
I
-- V
1.8
1.6
1.4
1.2
–A
D
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
00.60.2 0.4 0.8 1.0 1.2 1.61.4 2.01.8
8.0V
10.0V
D
6.0V
3.0V
Drain-to-Source Voltage, VDS –V
1400
1200
mΩ
–
1000
DS(on)
800
600
400
200
Static Drain-to-Source
On-State Resistance, R
0
010468 14212161820
RDS(on) -- V
Gate-to-Source Voltage, VGS –V
3.5V
DS
5.0V
4.0V
GS
=2.5V
V
GS
Tc=25°C
ID=0.8A
IT01258
IT01260
I
-- V
3.5
VDS=10V
3.0
2.5
–A
D
2.0
1.5
1.0
Drain Current, I
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
D
GS
Tc=75°C
°C
--25
25°C
Gate-to-Source Voltage, VGS –V
1000
mΩ
800
–
600
DS(on)
400
200
Static Drain-to-Source
On-State Resistance, R
0
--4 0--60 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Tc
=4V
GS
=0.8A, V
I
D
I
D
GS
=0.8A, V
=10V
Case Temperature, Tc – °C
IT01259
IT01261
No.6413–2/4
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