SANYO 2SK3285 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6358
2SK3285
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20.9
4.5
Features
· Low ON resistance.
· 4V drive.
Package Dimensions
unit:mm
2093A
[2SK3285]
10.2
0.9
11.5
1.6
0.8
9.4
2.55
123
1.2
11.0 8.8
0.4
2.7
2.55
unit:mm
2169
9.9
4.5
0.8
1.6
123
0.8
2.55
2.55
[2SK3285]
10.2
2.0
1.2
2.55
2.7
2.55
4.5
1.3
8.8
2.5
1.5
0.4
1.3
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FA
30300TS (KOTO) TA-2280 No.6358–1/5
2SK3285
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25˚C
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
SG
R
R
r
f
DS
V
)ffo(VSDI,V01=
1IDV,A01=
)no(SD
2IDV,A4=
)no(SD
)no(d
)ffo(d
I
SD
SG
SD
SD
SD
S
0=03V
SG
V,V03=
0=1Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A01=2181S
D
V01=7132mΩ
SG
V5.4=4243mΩ
SG
zHM1=f,V01=0001Fp
zHM1=f,V01=014Fp
zHM1=f,V01=061Fp
tiucriCtseTdeificepseeS11sn
tiucriCtseTdeificepseeS012sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A02=
SG
D
0=0.12.1V
03V
02±V
04A
08A
56.1W
04W
sgnitaR
nimpytxam
A02=71Cn
A02=0.4Cn
A02=5.3Cn
˚C
˚C
tinU
Switching Time Test Circuit
V
IN
10V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
G
50Ω
VDD=15V
D
S
ID=10A
RL=1.5Ω
V
OUT
No.6358–2/5
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