Sanyo 2SK3278 Specifications

Ordering number : ENN6680

2SK3278

N-Channel Silicon MOSFET

2SK3278

DC/DC Converter Applications

Features

•

Low ON-resistance.

• 4V drive.

• Ultrahigh-speed switching.

Package Dimensions

unit : mm

2083B

[2SK3278]

6.5

unit : mm

2092B

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

6.5

5.0

4

1.55.5

1.5

5.5

0.8

1.6

[2SK3278]

7.0

7.5

2.3

2.3

0.5

1.2

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

0.5

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

DSS
GSS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.85

12

0.6

2.3 2.3

0.8

3

7.0

0.5

2.5

1.2
0 to 0.2

N3000 TS IM TA-2613

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

30 V

±20 V

No.6680-1/4

2SK3278

Continued from preceding page.

Parameter Symbol Conditions Ratings Unit
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DP

D

PW≤10µs, duty cycle≤1% 45 A

D

Tc=25°C15W

Electrical Characteristics at Ta=25°C

15 A

1W

Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V

Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance |yfs| VDS=10V, ID=7A 7 10 S

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V, f=1MHz 530 pF

Output Capacitance Coss VDS=10V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 90 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 40 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=15A 10 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=15A 1.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=15A 1.0 nC
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

RDS(on)1 ID=7A, VGS=10V 27 36 mΩ
RDS(on)2 ID=4A, VGS=4.5V 40 56 mΩ

r

f

SD

=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

See specified Test Circuit 130 ns

See specified Test Circuit 60 ns

IS=15A, VGS=0 1.0 1.2 V

min typ max

Rathings

Marking : K3278

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=7A
RL=2.1Ω

V

OUT

Unit

P.G

10

9

8.0V

8

7

-- A
D

Drain Current, I

10.0V

6

5

4

3

2
1
0

0 1.0 1.20.2 0.4 0.6 0.8

6.0V

4.5V

I

3.5V

50Ω

D

3.0V

Drain-to-Source V oltage, VDS -- V

-- V

DS

VGS=2.5V

S

2SK3278

IT02555

10

9

8

7

-- A
D

6

5

4

3

Drain Current, I

2
1
0

0 2.51.5 2.0 4.03.53.00.5 1.0

I

-- V

D

GS

Tc=75°C

°C

25

--25°C

Gate-to-Source V oltage, VGS -- V

VDS=10V

IT02556

No.6680-2/4