Ordering number : ENN6680
2SK3278
N-Channel Silicon MOSFET
2SK3278
DC/DC Converter Applications
Features
•
Low ON-resistance.
• 4V drive.
• Ultrahigh-speed switching.
Package Dimensions
unit : mm
2083B
[2SK3278]
6.5
unit : mm
2092B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
6.5
5.0
4
1.55.5
1.5
5.5
0.8
1.6
[2SK3278]
7.0
7.5
2.3
2.3
0.5
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
0.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
DSS
GSS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.85
12
0.6
2.3 2.3
0.8
3
7.0
0.5
2.5
1.2
0 to 0.2
N3000 TS IM TA-2613
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
30 V
±20 V
No.6680-1/4
2SK3278
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DP
D
PW≤10µs, duty cycle≤1% 45 A
D
Tc=25°C15W
Electrical Characteristics at Ta=25°C
15 A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V
Forward Transfer Admittance |yfs| VDS=10V, ID=7A 7 10 S
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V, f=1MHz 530 pF
Output Capacitance Coss VDS=10V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 90 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 40 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=15A 10 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=15A 1.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=15A 1.0 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
RDS(on)1 ID=7A, VGS=10V 27 36 mΩ
RDS(on)2 ID=4A, VGS=4.5V 40 56 mΩ
r
f
SD
=1mA, VGS=0 30 V
VDS=30V, VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA
See specified Test Circuit 130 ns
See specified Test Circuit 60 ns
IS=15A, VGS=0 1.0 1.2 V
min typ max
Rathings
Marking : K3278
Switching Time Test Circuit
VDD=15V
V
IN
10V
0V
PW=10µs
D.C.≤1%
V
IN
G
D
ID=7A
RL=2.1Ω
V
OUT
Unit
P.G
10
9
8.0V
8
7
-- A
D
Drain Current, I
10.0V
6
5
4
3
2
1
0
0 1.0 1.20.2 0.4 0.6 0.8
6.0V
4.5V
I
3.5V
50Ω
D
3.0V
Drain-to-Source V oltage, VDS -- V
-- V
DS
VGS=2.5V
S
2SK3278
IT02555
10
9
8
7
-- A
D
6
5
4
3
Drain Current, I
2
1
0
0 2.51.5 2.0 4.03.53.00.5 1.0
I
-- V
D
GS
Tc=75°C
°C
25
--25°C
Gate-to-Source V oltage, VGS -- V
VDS=10V
IT02556
No.6680-2/4
60
55
50
ID=4A
45
(on) -- mΩ
40
DS
35
30
25
20
15
10
Static Drain-to-Source
On-State Resistance, R
5
0
RDS(on) -- V
7A
GS
Gate-to-Source V oltage, VGS -- V
100
7
5
3
fs| -- S
2
y
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
2
0.1 1.0 10
|yfs| -- I
Tc= --25
75°C
57 2 3357
Drain Current, I
1000
7
5
3
2
Ciss, Coss, Crss -- V
Ciss
Coss
°C
D
°C
25
-- A
D
2SK3278
Tc=25°C
IT02557
V
=10V
DS
IT02559
DS
f=1MHz
80
70
60
(on) -- mΩ
50
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 806020 40 160120 140100--40 --20 00481216202 6 10 14 18
10
7
5
3
2
1.0
-- A
7
F
5
3
2
0.1
7
5
3
2
0.01
7
Forward Drain Current, I
5
3
2
0.001
0.2 0.4 0.6 0.8 1.0 1.20.3 0.5 0.7 0.9 1.1
12
VDS=10V
ID=7A
10
-- V
GS
8
RDS(on) -- Tc
=4A
D
=4.5V, I
GS
V
D
=10V, I
V
GS
Case Temperature, Tc -- °C
I
-- V
F
SD
°C
°C
25°C
Tc=75
--25
Diode Forward V oltage, V
VGS -- Qg
=7A
SD
-- V
IT02558
VGS=0
IT02560
100
7
5
Ciss, Coss, Crss -- pF
3
2
10
0 5 10 15 20 25
Crss
Drain-to-Source-V oltage, V
SW Time -- I
1.0
Drain Current, I
D
Switching Time, SW Time -- ns
1000
100
1.0
7
5
3
2
t
7
f
5
td(off)
3
2
td(on)
10
7
5
t
r
3
2
23 57
0.1
IT02561
-- V
DS
D
VDD=15V
VGS=10V
23 57
-- A
IT02563
6
4
2
Gate-to-Source V oltage, V
30
10
0
0
100
7
I
=45A
DP
5
3
2
I
=15A
D
-- A
10
7
D
5
3
2
1.0
7
Drain Current, I
5
3
Tc=25°C
2
Single pulse
0.1
23 57 2 2 2333555777
0.01
4567892311110
Total Gate Charge, Qg -- nC
A S O
<10µs
1ms
10ms
DC operation
Operation in this
area is limited by RDS(on).
0.1 1.0 10 100
Drain-to-Source V oltage, V
DS
-- V
IT02562
100µs
IT02564
No.6680-3/4
2SK3278
1.2
1.0
-- W
D
0.8
0.6
0.4
PD -- Ta
25
-- W
20
D
15
10
PD -- Tc
0.2
Allowable Power Dissipation, P
0020 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C
IT02565
5
Allowable Power Dissipation, P
0020 40 60 80 100 120 140 160
Case Tamperature, Tc -- °C
IT02566
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2000. Specifications and information herein are subject
to change without notice.
No.6680-4/4
PS
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