Sanyo 2SK3122 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6105A

2SK3122

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)esluP(tnerruCniarDI

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

0.4

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C
Mounted on a ceramic board (250mm2×0.8mm)

[2SK3122]

1.6

2.5

0.5

3

2

1.5

3.0

0.75

1.0

1

1.5

4.25max

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

03V
42±V
3A
21A

5.3W

5.1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A5.1=

)no(SD

2I

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

D

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A5.1=7.15.2S

D

V01=511051mΩ

SG

V,Am005=

V4=032023mΩ

SG

nimpytxam

Marking : KW Continued on next page.

30100TS (KOTO) TA-2497 No.6105–1/4

sgnitaR

tinU

2SK3122

Continued from preceding page.

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emiTyaleDNO-nruTt

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emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

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egrahC"relliM"niarD-ot-etaGdgQ 4.1Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A3=

S

Switching Time Test Circuit

VDD=15V

D

ID=1.5A
RL=10Ω

V

OUT

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

G

zHM1=f,V01=521Fp
zHM1=f,V01=08Fp
zHM1=f,V01=53Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS11sn

V,V01=

SG

I,V01=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

6.5Cn

A3=

tinU

P.G

3.2

2.8

2.4

–A

2.0

D

1.6

1.2

Drain Current, I

0.8

0.4

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0

Drain-to-Source Voltage, VDS –V

300

mΩ

240

–

ID=0.5A

DS(on)

180

120

60

Static Drain-to-Source

On-State Resistance, R

10.0V

R

ID=1.5A

50Ω

ID-

8.0V

DS(on)

6.0V

2SK3122

S

V

DS

4.0V

6

VDS=10V

5

ID-

V

GS

°C

25°C

Tc=-25

3.5V

3.0V

4

–A

D

3

2

Drain Current, I

1

75°C

VGS=2.5V

0

0

12 3 546

Gate-to-Source Voltage, VGS –V

-

V

GS

Tc=25°C

400

mΩ
–

300

DS(on)

200

100

Static Drain-to-Source

On-State Resistance, R

R

=0.5A,V

I

D

I

DS(on)

=1.5A

D

GS

,V

=4V

GS

-

=10V

Tc

0

20 4 6 8 10 12 14 16 18 20

Gate-to-Source Voltage, VGS –V

0

020-20-40-60 40 60 80 100 120 160140

Case Temperature, Tc – °C

No.6105–2/4