Sanyo 2SK3122 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6105A

2SK3122

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

0.4

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C
Mounted on a ceramic board (250mm2×0.8mm)

[2SK3122]

1.6

2.5

0.5

3

2

1.5

3.0

0.75

1.0

1

1.5

4.25max

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

03V
42±V
3A
21A

5.3W

5.1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A5.1=

)no(SD

2I

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

D

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A5.1=7.15.2S

D

V01=511051mΩ

SG

V,Am005=

V4=032023mΩ

SG

nimpytxam

Marking : KW Continued on next page.

30100TS (KOTO) TA-2497 No.6105–1/4

sgnitaR

tinU

2SK3122

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 1Cn

egrahC"relliM"niarD-ot-etaGdgQ 4.1Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A3=

S

Switching Time Test Circuit

VDD=15V

D

ID=1.5A
RL=10Ω

V

OUT

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

G

zHM1=f,V01=521Fp
zHM1=f,V01=08Fp
zHM1=f,V01=53Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS11sn

V,V01=

SG

I,V01=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

6.5Cn

A3=

tinU

P.G

3.2

2.8

2.4

–A

2.0

D

1.6

1.2

Drain Current, I

0.8

0.4

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0

Drain-to-Source Voltage, VDS –V

300

mΩ

240

–

ID=0.5A

DS(on)

180

120

60

Static Drain-to-Source

On-State Resistance, R

10.0V

R

ID=1.5A

50Ω

ID-

8.0V

DS(on)

6.0V

2SK3122

S

V

DS

4.0V

6

VDS=10V

5

ID-

V

GS

°C

25°C

Tc=-25

3.5V

3.0V

4

–A

D

3

2

Drain Current, I

1

75°C

VGS=2.5V

0

0

12 3 546

Gate-to-Source Voltage, VGS –V

-

V

GS

Tc=25°C

400

mΩ
–

300

DS(on)

200

100

Static Drain-to-Source

On-State Resistance, R

R

=0.5A,V

I

D

I

DS(on)

=1.5A

D

GS

,V

=4V

GS

-

=10V

Tc

0

20 4 6 8 10 12 14 16 18 20

Gate-to-Source Voltage, VGS –V

0

020-20-40-60 40 60 80 100 120 160140

Case Temperature, Tc – °C

No.6105–2/4

10

VDS=10V

7
5

3

|–S

2

fs

1.0
7
5

3
2

0.1
7

5
3

2

Forward Transfer Admittance, | y

0.01
23 57 23 57 23 57

0.01 0.1 1.0 10

|yfs |-I

D

Tc=-25°C

25°C

75°C

Drain Current, ID–A

1000

Ciss, Coss, Crss – pF

100

Ciss,Coss,Crss-V

7
5

3
2

7
5

3
2

10

840 121620242832 1 2 3 4 5 60

DS

Drain-to-Source Voltage,VDS–V

td(on)

SW Time

t

(off)

d

t

f

1000

VDD=15V

7

VGS=10V

5
3

2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0
7 2357 2357

-

I

D

r

t

1.0 100.1

Drain Current, ID–A

-

1.6

1.5

1.4

–W

D

1.2

P

D

Mounted on a ceramic board (250mm

Ta PD-

2SK3122

f=1MHz

Ciss

Coss

Crss

10

7

VGS=0

5
3

2

1.0
7

–A

5

F

3
2

0.1
7

5
3

2

0.01

Forward Current, I

7
5

3
2

0.001
0 0.2 0.4 0.6 1.00.8 1.2 1.4

IF-

V

SD

°C

25°C

°C

75

Tc=-25

Diode Forward Voltage, VSD–V

-

10

–V

GS

Gate-to-Source Voltage, V

VDS=10V

9

ID=3A

8

7

6

5

4

3

2

1
0

V

GS

Qg

Total Gate Charge, Qg – nC

2

IDP=12A

10

7
5

ID=3A

3
2

–A

1.0

D

7

Operation in this area

5

is limited by RDS(on).

3
2

0.1

Drain Current, I

7
5

3

Tc=25˚C

2

1pulse

0.01
23 57 23 5 23 57

0.1 101.0

A S O

D

C operation

100m

10µs

10ms

s

1ms

Drain-to-Source Voltage,VDS–V

4.0

3.5

Tc

–W

D

3.0

100µs

1.0

0.8

0.6

0.4

0.2

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

2

×0.8mm)

2.0

1.0

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

Case Temperature, Tc – °CAmbient Temperature, Ta – °C

No.6105–3/4

2SK3122

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6105–4/4