Sanyo 2SK3122 Specifications

Ordering number:ENN6105A

N-Channel Silicon MOSFET

2SK3122

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

·Low ON resistance.

·Ultrahigh-speed switching.

·4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

unit:mm

2062A

[2SK3122]

4.5

	1.6		1.5
		2.5	4.25max
0.4	0.5	1.0
3	2	1	0.4
	1.5
	3.0		1 : Gate
	0.75		2 : Drain

3 : Source

SANYO : PCP

(Bottom view)

Parameter	Symbol	Conditions		Ratings	Unit
Drain-to-Source Voltage	VDSS			30	V
Gate-to-Source Voltage	VGSS			±24	V
Drain Current (DC)	ID			3	A
Drain Current (Pulse)	IDP	PW≤10µs, duty cycle≤1%		12	A
Allowable Power Dissipation	PD	Tc=25˚C		3.5	W
		2	×0.8mm)	1.5	W
		Mounted on a ceramic board (250mm
Channel Temperature	Tch			150	˚C
Storage Temperature	Tstg			–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol		Conditions		Ratings		Unit
				min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		30			V
Zero Gate Voltage Drain Current	IDSS	VDS=30V, VGS=0				10	µA
Gate-to-Source Leakage Current	IGSS	VGS=±16V, VDS=0				±10	µA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA		1.0		2.4	V
Forward Transfer Admittance	| yfs |	VDS=10V, ID=1.5A		1.7	2.5		S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=1.5A, VGS=10V			115	150	mΩ
	RDS(on)2	ID=500mA, VGS=4V			230	320	mΩ
Marking : KW					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

30100TS (KOTO) TA-2497 No.6105–1/4

2SK3122

Continued from preceding page.

Parameter		Symbol	Conditions		Ratings		Unit
				min	typ	max
Input Capacitance		Ciss	VDS=10V, f=1MHz		125		pF
Output Capacitance		Coss	VDS=10V, f=1MHz		80		pF
Reverse Transfer Capacitance		Crss	VDS=10V, f=1MHz		35		pF
Turn-ON Delay Time		td(on)	See specified Test Circuit		7		ns
Rise Time		tr	See specified Test Circuit		15		ns
Turn-OFF Delay Time		td(off)	See specified Test Circuit		17		ns
Fall Time		tf	See specified Test Circuit		11		ns
Total Gate Charge		Qg			5.6		nC
Gate-to-Source Charge		Qgs	VDS=10V, VGS=10V, ID=3A		1		nC
Gate-to-Drain "Miller" Charge		Qgd			1.4		nC
Diode Forward Voltage		VSD	IS=3A, VGS=0		1.0	1.2	V
Switching Time Test Circuit
VIN	VDD=15V
10V
0V		ID=1.5A
VIN		RL=10Ω
PW=10µs	D	VOUT
D.C.≤ 1%

	G
	2SK3122
P.G	50Ω
	S

ID - VDS

		3.2
														.0V									.0V
		2.8								.	0V			6									4
									10
		2.4
	A
														8.0V
	–																						3.5V
	D	2.0
	I
	Current,	1.6
	Drain	1.2
																							3.0V
		0.8
		0.4
																				VGS=2.5V
		0
		0		0.1		0.2			0.3			0.4		0.5		0.6		0.7		0.8			0.9		1.0
						Drain-to-Source Voltage, VDS														– V
		300							RDS(on) - VGS
																							Tc=25°C
	mΩ
		240						ID=1.5A
	–
	DS(on)
				ID=0.5A
to-DrainStatic-Source	Resistance,State-On R	180
		120
		60
		0
		0		2		4				6		8		10		12		14		16			18		20

Gate-to-Source Voltage, VGS – V

ID - VGS

	6
		VDS=10V																			°		C
																												C
																					25						°
	5																		Tc=	-						25
A																								°	C
–	4																						75
D
I
Current,	3
Drain	2
	1
	0
	0		1					2					3					4										5				6
						Gate-to-Source Voltage, VGS																			–	V
	400								RDS(on) - Tc
mΩ
–	300
DS(on)
										.	5A,V			=4V
									=0					GS
Source-to-DrainStatic Resistance,State-OnR
								ID
	200
																=10V
														,VGS
									I			.5A
											=1
										D
	100
	0
	-60		-40 -20					0 20					40 60 80								100						120 140					160
								Case Temperature, Tc										–				°C

No.6105–2/4