Sanyo 2SK3121 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6104A

2SK3121

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

Package Dimensions

unit:mm

2062A

0.4

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C
Mounted on a ceramic board (250mm2×0.8mm)

[2SK3121]

1.6

2.5

0.5

3

2

1.5

3.0

0.75

1.0

1

1.5

4.25max

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

02V
01±V
3A
21A

5.3W

5.1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A5.1=

)no(SD

2I

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

D

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01=

Am1=4.03.1V

D

A5.1=0.33.4S

D

V4=511051mΩ

SG

V,Am005=

V5.2=061022mΩ

SG

nimpytxam

Marking : KU Continued on next page.

30100TS (KOTO) TA-2496 No.6104–1/4

sgnitaR

tinU

2SK3121

Continued from preceding page.

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emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

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egrahC"relliM"niarD-ot-etaGdgQ 5.1Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A3=

S

Switching Time Test Circuit

V

4V
0V

PW=10µs
D.C.≤1%

IN

V

IN

G

VDD=10V

D

ID=1.5A
RL=6.7Ω

V

OUT

zHM1=f,V01=071Fp
zHM1=f,V01=09Fp
zHM1=f,V01=34Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS23sn
tiucriCtseTdeificepseeS72sn

V,V01=

SG

I,V01=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

5.9Cn

A3=

tinU

P.G

3.2

2.8

2.4

–A

2.0

D

1.6

1.2

Drain Current, I

0.8

0.4

0

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

300

mΩ

250

–

ID=0.5A

200

DS(on)

150

100

2SK3121

50Ω

ID-

10.0V

V

2.5V

S

DS

8.0V

6.0V

4.0V

3.0V

VGS=1.5V

Drain-to-Source Voltage, VDS –V

R

DS(on)

-

V

GS

ID=1.5A

2.0V

Tc=25°C

6

VDS=10V

5

4

–A

D

3

2

Drain Current, I

1

0

0

0.4 0.8 1.2 1.6 2.4 2.82.0 3.2

280

240

mΩ
–

200

DS(on)

160

120

80

ID-

V

GS

°C

Tc=-25

75°C

Gate-to-Source Voltage, VGS –V

R

DS(on)

=0.5A,V

I

D

I

D

=1.5A,V

GS

GS

-

=2.5V

=4V

Tc

25°C

50

Static Drain-to-Source

On-State Resistance, R

0

10 2345678910

Gate-to-Source Voltage, VGS –V

40

Static Drain-to-Source

On-State Resistance, R

0

020-20-40-60 40 60 80 100 120 160140

Case Temperature, Tc – °C

No.6104–2/4