SANYO 2SK3120 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6103A

2SK3120

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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D

D

Package Dimensions

unit:mm

2062A

0.4

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C
Mounted on a ceramic board (250mm2×0.8mm)

[2SK3120]

1.6

2.5

0.5

3

2

1.5

3.0

0.75

1.0

1

1.5

4.25max

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)

03V
02±V
2A
8A

5.3W

3.1W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SSD
SSG

)ffo(SG

1IDV,A1=

)no(SD

2I

)no(SD

I

V,Am1=

SSD)RB(

D

V

SD

V

SG

V

SD

D

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

I,V01=

Am1=0.14.2V

D

A1=2.18.1S

D

V01=032003mΩ

SG

V,Am005=

V4=053084mΩ

SG

nimpytxam

Marking : KT Continued on next page.

30100TS (KOTO) TA-2495 No.6103–1/4

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2SK3120

Continued from preceding page.

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r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

V,A2=

S

Switching Time Test Circuit

VDD=15V

D

ID=1A
RL=15Ω

V

OUT

10V

0V

PW=10µs
D.C.≤1%

V

IN

V

IN

G

zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=22Fp

tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS8sn

V,V01=

SG

I,V01=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

5Cn

A2=

tinU

P.G

2.0

1.8

1.6

1.4

–A

1.2

D

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS –V

800

700

mΩ
–

600

500

DS(on)

400

ID=0.5A

300

200

Static Drain-to-Source

On-State Resistance, R

100

0

ID=1.0A

20 4 6 8 10 12 14 16 18 20

Gate-to-Source Voltage, VGS –V

8.0V

6.0V

50Ω

R

DS(on)

ID-

10.0V

2SK3120

S

V

DS

4.0V

3.5V

3.0V

VGS=2.5V

4.0

VDS=10V

3.6

3.2

2.8

–A

2.4

D

2.0

1.6

1.2

Drain Current, I

0.8

0.4
0

0

1.20.6 1.8 2.4 3.0 4.2 4.83.6 5.4

ID-

V

GS

°C

Tc=-25

75°C

25°C

Gate-to-Source Voltage, VGS –V

-

V

GS

Tc=25°C

600

500

mΩ
–

400

DS(on)

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

R

DS(on)

=0.5A,V

I

D

=1.0A,V

I

D

020-20-40-60 40 60 80 100 120 160140

GS

GS

-

=4V

=10V

Tc

Case Temperature, Tc – °C

No.6103–2/4