Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6098A
2SK3119
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2062A
0.4
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Mounted on a ceramic board (250mm2×0.8mm)
[2SK3119]
1.6
2.5
0.5
3
2
1.5
3.0
0.75
1.0
1
1.5
4.25max
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
02V
01±V
2A
8A
5.3W
3.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A1=
)no(SD
2I
)no(SD
I
V,Am1=
SSD)RB(
D
V
SD
V
SG
V
SD
D
0=02V
SG
V,V02=
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
A1=0.28.2S
D
V4=002003mΩ
SG
V,Am002=
V5.2=003084mΩ
SG
nimpytxam
Marking : KS Continued on next page.
30100TS (KOTO) TA-2494 No.6098–1/4
sgnitaR
tinU
2SK3119
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQ
egrahCecruoS-ot-etaGsgQ 1Cn
egrahC"relliM"niarD-ot-etaGdgQ 2Cn
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
V
SD
I
V,A2=
S
Switching Time Test Circuit
V
IN
4V
0V
PW=10µs
D.C.≤1%
V
IN
G
ID=1A
RL=10Ω
D
V
OUT
zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
V,V01=
SG
I,V01=
SG
D
0=0.12.1V
sgnitaR
nimpytxam
6Cn
A2=
tinU
P.G
2.0
1.8
1.6
1.4
–A
1.2
D
1.0
0.8
0.6
Drain Current, I
0.4
0.2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
500
mΩ
400
–
ID=0.2A
DS(on)
300
200
2SK3119
10.0V
50Ω
ID-
4.0V
3.0V
V
S
DS
2.5V
2.0V
8.0V
6.0V
VGS=1.5V
Drain-to-Source Voltage, VDS –V
R
DS(on)
-
V
GS
ID=1.0A
Tc=25°C
4.0
VDS=10V
3.6
3.2
2.8
–A
2.4
D
2.0
1.6
1.2
Drain Current, I
0.8
0.4
0
0
0.4 0.8 1.2 1.6 2.4 2.82.0 3.2
500
mΩ
400
–
DS(on)
300
200
ID-
V
GS
75°C
Tc=-25°C
Gate-to-Source Voltage, VGS –V
R
DS(on)
=0.2A,V
I
D
I
D
GS
=1.0A,V
-
=2.5V
=4V
GS
Tc
°C
25
100
Static Drain-to-Source
On-State Resistance, R
0
10 2345678910
Gate-to-Source Voltage, VGS –V
100
Static Drain-to-Source
On-State Resistance, R
0
020-20-40-60 40 60 80 100 120 160140
Case Temperature, Tc – °C
No.6098–2/4