SANYO 2SK3092 Datasheet
Ordering number : ENN6788
2SK3092
N-Channel Silicon MOSFET
2SK3092
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Low Qg.
Package Dimensions
unit : mm
2083B
[2SK3092]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
1.5
5.5
1.6
Package Dimensions
unit : mm
2092B
[2SK3092]
6.5
5.0
4
1.55.5
7.0
7.5
2.3
2.3
0.5
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
0.5
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3000 TS IM TA-3081
No.6788-1/4
2SK3092
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 12 A
Tc=25°C30W
Electrical Characteristics at Ta=25°C
400 V
±30 V
3A
1.0 W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.0 4.0 V
Forward Transfer Admittance | yfs | VDS=10V, ID=1.5A 0.7 1.4 S
Static Drain-to-Source On-State Resistance RDS(on) ID=1.5A, VGS=15V 1.8 2.3 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 360 pF
Output Capacitance Coss VDS=20V , f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 45 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=3A 10 nC
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 28 ns
Fall Time t
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
r
f
SD
=1mA, VGS=0 400 V
VDS=320V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA
See specified Test Circuit 10 ns
See specified Test Circuit 17 ns
IS=3A, VGS=0 0.85 1.2 V
Ratings
min typ max
Marking : K3092
Switching Time Test Circuit
PW=1µs
D.C.≤0.5%
VGS=15V
VDD=200V
D
ID=1.5A
RL=133Ω
V
OUT
Unit
7
6
5
-- A
D
4
3
2
Drain Current, I
1
0
G
P.G
I
D
-- V
R
50Ω
DS
GS
15V
Drain-to-Source V oltage, VDS -- V
2SK3092
S
ID -- V
GS
10V
6
VDS=10V
5
25°C
4
8V
7V
-- A
D
3
2
Tc= --25°C
75°C
Drain Current, I
VGS=6V
3020100
IT01967 IT01968
1
0
0
5101520
Gate-to-Source V oltage, VGS -- V
No.6788-2/4
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