SANYO 2SK3072 Datasheet

Ordering number : ENN7224

2SK3072

N-Channel Silicon MOSFET

2SK3072

Ultrahigh-Speed Switching Applications

Features

•

Ultrahigh-speed switching.

•

Low-voltage drive.

Package Dimensions

unit : mm

2091A

[2SK3072]

0.4

3

0.95

0.95

1

2

1.9

2.9

0.5

1.5

0.5

2.5

0.16

0 to 0.1

1 : Gate
2 : Source
3 : Drain

1.1

Specifications

0.8

SANYO : CP

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 120 mA

450 V
±10 V

30 mA

250 mW

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.0 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V, f=1MHz 20 pF

Output Capacitance Coss VDS=20V, f=1MHz 5 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 3 pF

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=15mA, VGS=10V 210 275 Ω
RDS(on)2 ID=15mA, VGS=4V 230 300 Ω

=300µA, VGS=0 450 V
VDS=360V, VGS=0 10 µA
VGS=±10V, VDS=0 ±10 µA

VDS=10V, ID=15mA 14 28 mS



min typ max

Marking : HK Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80902 TS IM TA-1670

No.7224-1/4

2SK3072

Continued from preceding page.

Parameter Symbol Conditions

Turn-ON Delay Time td(on) See specified Test Circuit. 25 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 110 ns
Fall Time t
Diode Forward Voltage V

SD

See specified Test Circuit. 100 ns

r

See specified Test Circuit. 1.2 µs

f

IS=30mA, VGS=0 1.2 V

min typ max

Switching Time Test Circuit

Ratings

Unit

G

50Ω

-- V

VDD=200V

D

DS

ID=15mA

RL=13.3kΩ

2SK3072

S

V

10V

OUT

5V

4V

I

-- V

60

50

40

-- m A
D

30

D

Ta= --25

25°C

75

°C

GS

C

°

VDS=10V

V

IN

10V

0V

PW=10µs
D.C.≤1%

P.G

80

70

60

50

-- m A
D

40

I

V

D

IN

30

20

Drain Current, I

10

DS

VGS=2V

-- V

Ta=25°C

(on) -- mΩ

700

600

500

DS

400

0

Drain-to-Source V oltage, V

RDS(on) -- V

GS

ID=30mA

15mA

300

1mA

200

100

Static Drain-to-Source

On-State Resistance, R

0

0246810121416

Gate-to-Source V oltage, V

GS

-- V

3V

50403020100

IT04342 IT04343

IT04344

20

Drain Current, I

10

0

0

500

450

400

350

(on) -- mΩ

DS

300

250

200

150

100

Static Drain-to-Source

On-State Resistance, R

50

0

--50 --25 0 25 50 75 100 125 150

51015

Gate-to-Source V oltage, V

GS

-- V

RDS(on) -- Ta

=4V

GS

=10V

=15mA, V

I

D

=15mA, V

I

D

GS

Ambient Temperature, Ta -- °C

IT04345

No.7224-2/4