SANYO 2SK2977LS Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN6423

2SK2977LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON resistance.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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D

D

Package Dimensions

unit:mm

2078B

[2SK2977LS]

10.0

3.2

16.1

3.6

123

SSD
SSG

WP ≤ elcycytud,sµ01 ≤ %1021A

PD

Tc=25˚C

3.5

7.2

0.9

1.2

0.75

2.4

2.552.55

16.0

14.0

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source
SANYO : TO220FI-LS

03V
02±V
03A

0.2W
03W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(VSGI,V01=

2)no(VSGI,V4=

I

V,Am1=

D

V

SD

V

SG

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

A81=5172S

D

A81=5122mΩ

D

A81=5253mΩ

D

31000TS (KOTO) TA-2275 No.6423–1/4

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Continued on next page.

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2SK2977LS

Continued from preceding page.

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emiTyaleDFFO-nruTt

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egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

zHM1=f,V01=0061Fp
zHM1=f,V01=008Fp
zHM1=f,V01=003Fp

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tiucriCtseTdeificepseeS081sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A03=

SG

D

0=0.12.1V

sgnitaR

nimpytxam

A81=04Cn
A81=5Cn
A81=21Cn

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Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

P.G

30

25

–A

20

D

15

10

G

50Ω

10.0V

Drain Current, I

5

0

00.20.1 0.40.3 0.60.5 0.80.7 1.00.9

50

45

Drain-to-Source Voltage, VDS–V

D

I

-- V

D

RDS(on) -- V

8.0V

6.0V

ID=18A
RL=0.83Ω

S

DS

GS

4.0V

V

OUT

VGS=2.5V

3.0V

IT01054

Tc=25°C
ID=18A

30

25

20

–A

D

15

10

Drain Current, I

5

D

VDS=10V

GS

°C

--25

Tc=75°C

I

-- V

25°C

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

40

35

Gate-to-Source Voltage, VGS–V

RDS(on) -- Tc

IT01055

–mΩ

40

(on)

35

DS

30

25

20

15

Static Drain-to-Source

On-State Resistance, R

10

Gate-to-Source Voltage, V

–mΩ

30

(on)

25

DS

20

15

10

5

Static Drain-to-Source

On-State Resistance, R

5472638910

GS

–V

IT01056

0

--60 40--40 --20 12020 60 80 100 1601400

=4V

GS

=18A, V

I

D

=10V

GS

=18A, V

I

D

Case Temperature, Tc – ˚C

IT01057

No.6423–2/4