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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN6423
2SK2977LS
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2078B
[2SK2977LS]
10.0
3.2
16.1
3.6
123
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %1021A
PD
Tc=25˚C
3.5
7.2
0.9
1.2
0.75
2.4
2.552.55
16.0
14.0
2.8
0.6
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO220FI-LS
03V
02±V
03A
0.2W
03W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SG
SD
SD
SSD)RB(
SSD
SSG
)ffo(VSDI,V01=
1)no(VSGI,V01=
2)no(VSGI,V4=
I
V,Am1=
D
V
SD
V
SG
0=03V
SG
V,V03=
0=01Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1=0.14.2V
D
A81=5172S
D
A81=5122mΩ
D
A81=5253mΩ
D
31000TS (KOTO) TA-2275 No.6423–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
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2SK2977LS
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
zHM1=f,V01=0061Fp
zHM1=f,V01=008Fp
zHM1=f,V01=003Fp
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS054sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS081sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A03=
SG
D
0=0.12.1V
sgnitaR
nimpytxam
A81=04Cn
A81=5Cn
A81=21Cn
tinU
Switching Time Test Circuit
VDD=15V
V
IN
10V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
30
25
–A
20
D
15
10
G
50Ω
10.0V
Drain Current, I
5
0
00.20.1 0.40.3 0.60.5 0.80.7 1.00.9
50
45
Drain-to-Source Voltage, VDS–V
D
I
-- V
D
RDS(on) -- V
8.0V
6.0V
ID=18A
RL=0.83Ω
S
DS
GS
4.0V
V
OUT
VGS=2.5V
3.0V
IT01054
Tc=25°C
ID=18A
30
25
20
–A
D
15
10
Drain Current, I
5
D
VDS=10V
GS
°C
--25
Tc=75°C
I
-- V
25°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
40
35
Gate-to-Source Voltage, VGS–V
RDS(on) -- Tc
IT01055
–mΩ
40
(on)
35
DS
30
25
20
15
Static Drain-to-Source
On-State Resistance, R
10
Gate-to-Source Voltage, V
–mΩ
30
(on)
25
DS
20
15
10
5
Static Drain-to-Source
On-State Resistance, R
5472638910
GS
–V
IT01056
0
--60 40--40 --20 12020 60 80 100 1601400
=4V
GS
=18A, V
I
D
=10V
GS
=18A, V
I
D
Case Temperature, Tc – ˚C
IT01057
No.6423–2/4