SANYO 2SK2969 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6314
2SK2969
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.4
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Package Dimensions
unit:mm
2091A
[2SK2969]
3
1
0.95
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
0 to 0.1
1 : Gate
1.1
2 : Source
3 : Drain
SANYO : CP
03V
01±V
8.0A
2.3A
52.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1=
0=03V
SG
V,V03=
SD
SG
SD
0=01Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01=
Am1=4.03.1V
D
Am004=1.16.1S
D
V,Am004=
V4=082073mΩ
SG
V,Am001=
V5.2=043025mΩ
SG
nimpytxam
Marking : GK Continued on next page.
31000TS (KOTO) TA-2652 No.6314–1/4
sgnitaR
tinU
2SK2969
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
V
4V
0V
PW=10µs
D.C.≤1%
IN
V
IN
G
VDD=15V
D
ID=400mA
RL=37.5Ω
V
OUT
zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=02Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS02sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,Am008=
D
0=8.02.1V
SG
sgnitaR
nimpytxam
Am008=6Cn
Am008=1Cn
Am008=2Cn
tinU
P.G
1.0
8.0V 6.0V
0.9
0.8
0.7
–A
D
0.6
0.5
0.4
0.3
Drain Current, I
0.2
0.1
10.0V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
50Ω
ID-
4.0V 3.0V
2.5V
2.0V
V
2SK2969
S
DS
VGS=1.5V
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
10
7
5
fs|–S
y
3
2
1.0
7
5
3
2
D
Ta=
25
-
75
VDS=10V
°C
°C
Forward Transfer Admittance, |
0.1
23 57 23 2357
0.01 0.1 1.0
Drain Current, ID–A
ID-
V
75°C
GS
°C
25
Ta=
°C
25
-
2.0
1.8
1.6
1.4
–A
D
1.2
1.0
0.8
0.6
Drain Current, I
0.4
0.2
VDS=10V
0
0
0.5 1.0 1.5 2.0 2.5
Gate-to-Source Voltage, VGS–V
R
500
450
400
–mΩ
°C
25
350
300
DS(on)
250
200
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
0.1A
10 2345678910
DS(on)
ID=0.4A
Gate-to-Source Voltage, V
-
V
GS
°C
Ta=25
–V
GS
No.6314–2/4
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