SANYO 2SK2951 Datasheet

Ordering number : ENN6916

2SK2951

N-Channel Silicon MOSFET

2SK2951

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

Package Dimensions

unit : mm

2062A

[2SK2951]

0.4

3

1.5

0.75

4.5

1.6

3.0

0.5

2

1

1.5

2.5

4.25max

1.0

0.4

1 : Gate
2 : Drain
3 : Source

Specifications

SANYO : PCP
(Bottom view)

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature Tch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 4 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W

2

✕0.8mm) 1.5 W

200 V
±20 V

1A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=10V 2.5 3.5 Ω

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 200 V
VDS=200V, VGS=0 100 µA
VGS=±15V, VDS=0 ±10 µA

VDS=10V, ID=0.5A 0.4 0.8 S

min typ max

Marking : KS Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

20101 TS IM TA-1034

No.6916-1/4

2SK2951

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 60 pF
Output Capacitance Coss VDS=20V , f=1MHz 18 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 7 pF
Turn-ON Delay Time td(on) See specified Test Circuit 5 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 30 ns
Fall Time t
Diode Forward Voltage V

SD

See specified Test Circuit 10 ns

r

See specified Test Circuit 18 ns

f

IS=1A, VGS=0 1.0 1.5 V

min typ max

Switching Time Test Circuit

Ratings

Unit

IN

VDD=100V

D

ID=0.5A
RL=200Ω

V

OUT

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

G

8V

ID -- V

6V

50Ω

5V

DS

S

2SK2951

=4V

V

GS

P.G

1.0

0.8

-- A
D

0.6

10V

20V

0.4

Drain Current, I

0.2

0

012345

Drain-to-Source V oltage, VDS -- V

6.0

5.5

5.0

4.5

4.0

(on) -- Ω

DS

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

02468101214 2016 18

RDS(on) -- V

GS

Tc=25°C
ID=0.5A

Gate-to-Source V oltage, VGS -- V

ID -- V

2.0

1.8

1.6

1.4

-- A
D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

IT02855 IT02856

IT02857

01234567 1089

6.0

5.5

5.0

4.5

4.0

(on) -- Ω

DS

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

--60 --40 --20 0 20 40 60 80 100 120 160140

Gate-to-Source V oltage, VGS -- V

RDS(on) -- Tc

Case Temperature, Tc -- °C

GS

VDS=10V

75°C

Tc= --25°C

25°C

VGS=10V
ID=0.5A

IT02858

No.6916-2/4