SANYO 2SK2919 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6121
2SK2919
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· On-chip high-speed diode (trr=100ns).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2128
[2SK2919]
8.2
7.8
0.4
4.2
2.5
SSD
SSG
PD
Tc=25°C
6.2
0.2
3
8.4
1.2
2
1.0
2.54
6.2
1.0
2.54
1
5.08
10.0
6.0
10.0
0.6
0.7
0.3
0.6
7.8
5.2
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
006V
03±V
2A
8A
53W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
V
)no(SD
V,Am01=
0=006V
SG
V,V084=
SD
SG
SD
SG
SD
SD
SD
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=0.20.3V
D
A1=8.05.1S
D
I,V01=
A1=2.33.4
D
zHM1=f,V02=004Fp
zHM1=f,V02=55Fp
zHM1=f,V02=51Fp
nimpytxam
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source. Continued on next page.
21400TS (KOTO) TA-2283 No.6121–1/4
sgnitaR
tinU
Ω
2SK2919
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
emityrevoceresreveRedoiDt
)no(d
r
)ffo(d
f
I
V,A2=
DS
S
rr
0=5.1V
SG
Switching Time Test Circuit
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS56sn
tiucriCtseTdeificepseeS04sn
sµA001=td/id,A2=SI001sn
sgnitaR
nimpytxam
tinU
5
4
–A
D
3
10V
0V
P.G
V
GS
PW=1µs
D.C.≤0.5%
V
GS
G
50Ω
ID-
VDD=200V
D
S
V
DS
ID=1A
RL=200Ω
2SK2919
10V
V
OUT
6.0V
5.5V
5.0V
2
Drain Current, I
1
4.5V
4.0V
VGS=3.5V
0
048121620
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
5
3
2
fs|–S
y
25°C
1.0
7
5
3
2
Tc=
-
75°C
D
VDS=10V
25°C
ID-
3.6
VDS=10V
3.2
2.8
2.4
–A
D
2.0
1.6
1.2
Drain Current, I
0.8
0.4
0
02468 141210
V
Gate-to-Source Voltage, VGS–V
-
– Ω
DS(on)
R
6
5
4
3
2
DS(on)
GS
V
GS
Tc=
25°C
-
25°C
75°C
I
D
Tc=25°C
=2A
1A
0.5A
Forward Transfer Admittance, |
0.1
7
5
57
0.1
23
75231075
1.0
Drain Current, ID–A
1
Static Drain-to-Source
On-State Resistance, R
0
02468 141210
Gate-to-Source Voltage, VGS–V
No.6121–2/4
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