SANYO 2SK2911 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6313

2SK2911

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)CD(tnerruCniarDI

)esluP(tnerruCniarDI

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Package Dimensions

unit:mm

2091A

[2SK2911]

0.4

3

0.95

0.95

1

1.9

2.9

0.5

1.5

2

0.5

0.8

0.16

2.5

1.1

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : CP

001V
01±V

52.0A
1A

52.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,A51.0=

2)no(IDV,A1.0=

I

V,Am1=

D

V

SD

V

SG

0=001V

SG

V,V001=

0=001Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=5.05.1V

D

Am051=052005Sm

D

V4=5.25.3

SG

V5.2=0.32.4

SG

nimpytxam

Marking : FK Continued on next page.

52501TS KT TA-2137 No.6313–1/4

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tinU

Ω
Ω

2SK2911

Continued from preceding page.

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ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

d

r

d

f

DS

SD
SD
SD

)no(tiucriCtseTdeificepseeS51sn

)ffo(tiucriCtseTdeificepseeS52sn

I

S

Switching Time Test Circuit

zHM1=f,V02=05Fp
zHM1=f,V02=51Fp
zHM1=f,V02=4Fp

tiucriCtseTdeificepseeS01sn

tiucriCtseTdeificepseeS53sn

V,Am052=

0=8.02.1V

SG

sgnitaR

nimpytxam

tinU

V

IN

4V
0V

V

IN

PW=10µs
D.C.≤1%

G

P.G

50Ω

ID-

0.30

0.25

–A

0.20

D

0.15

0.10

Drain Current, I

0.05

0

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source Voltage, VDS–V

y

3
2

10

fs|–S

y

7
5

3
2

1.0
7

5
3

2

Forward Transfer Admittance, |

0.1

0.01 0.1

|

23 57 3257

Drain Current, ID–A

fs

VDD=50V

D

S

V

8.0V

10.0V

|

ID=0.15A
RL=333Ω

DS

-

2SK2911

6.0V

I

D

Ta=

75°C

V

OUT

4.0V

3.0V

-

2.5V

V

GS

VDS=10V

°C

25

25

=1.5V

°C

0.50

VDS=10V

0.45

0.40

0.35

–A

D

0.30

0.25

0.20

0.15

Drain Current, I

0.10

0.05

0

0

0.2 0.4 0.8 1.00.6 1.2 1.4 1.81.6 2.0

Gate-to-Source Voltage, VGS–V

5.0

4.5

4.0

–mΩ

DS(on)

Static Drain-to-Source

On-State Resistance, R

0.1A

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

10 2345678910

Gate-to-Source Voltage, VGS–V

R

DS(on)

ID=0.15A

I

-

V

D

GS

75

25°C

°C

°C

25

-

Ta=

-

V

GS

Ta=25°C

No.6313–2/4