Sanyo 2SK2909 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6312

2SK2909

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.4

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Package Dimensions

unit:mm

2091A

[2SK2909]

3

1

0.95

0.95

1.9

2.9

0.5

1.5

2

0.5

0.8

0.16

2.5

1.1

0 to 0.1

1 : Gate
2 : Source
3 : Drain
SANYO : CP

02V
01±V

8.0A

2.3A

52.0W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaGoreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

R

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

R

SG

SD
SD

SSD)RB(
SSD
SSG

)ffo(VSDI,V01=

1)no(IDV,Am004=

2)no(IDV,Am001=

I

V,Am1=

D

V

SD

V

SG

0=02V

SG

V,V02=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=4.03.1V

D

Am004=4.12 S

D

V4=002003mΩ

SG

V5.2=003084mΩ

SG

nimpytxam

Marking : DK Continued on next page.

60100TS (KOTO) TA-2643 No.6312–1/4

sgnitaR

tinU

2SK2909

VDD=10V

Continued from preceding page.

retemaraPlobmySsnoitidnoC

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQ

egrahCecruoS-ot-etaGsgQ 1Cn

egrahC"relliM"niarD-ot-etaGdgQ 2Cn

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

V

SD

I

S

Switching Time Test Circuit

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=400mA
RL=25Ω

V

OUT

zHM1=f,V01=09Fp
zHM1=f,V01=06Fp
zHM1=f,V01=82Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS52sn
tiucriCtseTdeificepseeS02sn

V,V01=

V,Am008=

I,V01=

SG

D

0=8.02.1V

SG

sgnitaR

nimpytxam

6Cn

Am008=

tinU

P.G

1.0

8.0V 6.0V

0.9

0.8

0.7

–A

0.6

D

0.5

0.4

0.3

Drain Current, I

0.2

0.1
0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

4.0V 3.0V

10.0V

2.5V

2.0V

50Ω

ID-

V

DS

2SK2909

S

VGS=1.5V

Drain-to-Source Voltage, VDS –V

10

7
5

|–S

fs

3
2

1.0
7
5

3
2



D

VDS=10V

°C

25

-

Ta=

75°C

y

fs -- I

Forward Transfer Admitance, | y

0.1

23 57 23 2357

0.01 0.1 1.0

Drain Current, ID–A

ID-

V

2.0

VDS=10V

1.8

1.6

1.4

–A

1.2

D

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0

0.2 0.4 0.8 1.00.6 1.2 1.4 1.81.6 2.0

GS

75°C

Ta=

25°C

°C

25

-

Gate-to-Source Voltage, VGS –V

R

500

450

mΩ

400

–

°C

25

350

(on)

DS

300
250

200
150

100

Static Drain-to-Source

On-State Resistance, R

50

0.1A

0

10 2345678910

DS(on)

ID=0.4A

Gate-to-Source Voltage, VGS –V

-

V

GS

Ta=25°C

No.3512–2/4