Sanyo 2SK2867 Specifications
Ordering number : ENN6617
2SK2867
N-Channel Silicon MOSFET
2SK2867
Ultrahigh-Speed Switching Applications
Features
•
Ultrahigh-speed switching.
• Low-voltage drive.
Package Dimensions
unit : mm
2091A
[2SK2867]
0.4
3
0.95
0.95
1
2
1.9
2.9
0.5
1.5
0.5
0.16
0 to 0.1
2.5
1 : Gate
2 : Source
3 : Drain
1.1
0.8
SANYO : CP
Specifications
Absolute Maximum Ratings at T a=25 °C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 120 mA
Tc=25°C 250 mW
450 V
±15 V
30 mA
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.0 V
Forward Transfer Admittance yfs
Static Drain-to-Sourse On-State Resistance
(BR)DSSID
DSS
GSS
RDS(on)1 ID=15mA, VGS=10V 190 250 Ω
RDS(on)2 ID=15mA, VGS=4V 210 275 Ω
=500µA, VGS=0 450 V
VDS=450V, VGS=0 10 µA
VGS=±12V, VDS=0 ±10 µA
VDS=10V , ID=15mA 14 28 mS
min typ max
Marking : CK Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2985
No.6617-1/4
2SK2867
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=20V , f=1MHz 20 pF
Output Capacitance Coss VDS=20V , f=1MHz 5 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 60 ns
Fall Time t
Diode Forward Voltage V
SD
See specified Test Circuit 45 ns
r
See specified Test Circuit 1 µs
f
IS=30mA, VGS=0 0.79 1.2 V
min typ max
Switching Time Test Circuit
V
10V
0V
PW=10µs
D.C.≤1%
IN
V
VDD=200V
ID=15mA
D
RL=13.3kΩ
V
OUT
IN
G
Ratings
Unit
S
DS
2SK2867
-- mA
D
120
100
P.G
80
60
40
50Ω
V
I
GS
D
=10V
-- V
Drain Current, I
20
0
0 5 10 15 20 25 30 35 40 45 50
Drain-to-Source V oltage, VDS -- V
500
450
400
350
(on) -- Ω
DS
300
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
02468101214161820
RDS(on) -- V
=30mA
I
D
GS
Gate-to-Source V oltage, VGS -- V
70
5V
4V
60
(on) -- mA
DS
3V
2V
IT02049 IT02050
Tc=25°C
50
40
30
20
10
0
Zero-Gate Voltage Drain Current, I
0 2 4 6 8 10 12 14 16 18 20
500
400
IDS(on) -- V
Tc=--25°C
25°C
75°C
Gate-to-Source V oltage, VGS -- V
RDS(on) -- Tc
GS
(on) -- Ω
GS
=4V
GS
=10V
15mA
1mA
IT02051
DS
300
=15mA, V
I
200
100
Static Drain-to-Source
On-State Resistance, R
0
--50 --25 0 25 50 75 100 125 150
D
=15mA, V
I
D
Case Temperature, Tc -- °C
VDS=10V
IT02052
No.6617-2/4
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