Sanyo 2SK2867 Specifications

Ordering number : ENN6617

2SK2867

N-Channel Silicon MOSFET

2SK2867

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

Ultrahigh-speed switching.

unit : mm

Low-voltage drive.

2091A

 

 

 

 

 

[2SK2867]

 

0.4

 

 

0.5

0.16

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

0 to 0.1

 

 

 

 

1.5

2.5

1

0.95

0.95

2

0.5

 

 

1.9

 

 

 

 

 

 

 

2.9

 

 

 

0.8

1.1

Specifications

1 : Gate

2 : Source

3 : Drain

SANYO : CP

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

Drain-to-Source Voltage

VDSS

 

 

 

 

 

450

V

Gate-to-Source Voltage

VGSS

 

 

 

 

 

±15

V

Drain Current (DC)

ID

 

 

 

 

 

30

mA

Drain Current (Pulse)

IDP

PW£10ms, duty cycle£1%

 

 

 

 

120

mA

Allowable Power Dissipation

PD

Tc=25°C

 

 

 

 

250

mW

Channel Temperature

Tch

 

 

 

 

 

150

°C

Storage Temperature

Tstg

 

 

 

--55 to +150

°C

 

 

 

 

 

 

 

 

 

Electrical Characteristics at Ta=25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

min

typ

 

max

 

 

 

 

 

 

 

 

 

 

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=500mA, VGS=0

450

 

 

 

V

Zero-Gate Voltage Drain Current

IDSS

VDS=450V, VGS=0

 

 

 

 

10

mA

Gate-to-Sourse Leakage Current

IGSS

VGS=±12V, VDS=0

 

 

 

 

±10

mA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.0

 

 

2.0

V

Forward Transfer Admittance

½yfs½

VDS=10V, ID=15mA

14

28

 

 

mS

Static Drain-to-Sourse On-State Resistance

RDS(on)1

ID=15mA, VGS=10V

 

 

190

 

250

W

RDS(on)2

ID=15mA, VGS=4V

 

 

210

 

275

W

 

 

 

 

Marking : CK

 

 

 

 

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2985 No.6617-1/4

Sanyo 2SK2867 Specifications

2SK2867

Continued from preceding page.

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

 

Input Capacitance

Ciss

VDS=20V, f=1MHz

 

20

 

pF

Output Capacitance

Coss

VDS=20V, f=1MHz

 

5

 

pF

Reverse Transfer Capacitance

Crss

VDS=20V, f=1MHz

 

3

 

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

 

10

 

ns

Rise Time

tr

See specified Test Circuit

 

45

 

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit

 

60

 

ns

Fall Time

tf

See specified Test Circuit

 

1

 

ms

Diode Forward Voltage

VSD

IS=30mA, VGS=0

 

0.79

1.2

V

Switching Time Test Circuit

VIN

V

DD

=200V

10V

 

 

 

 

 

0V

 

 

ID=15mA

 

VIN

 

RL=13.3kΩ

PW=10µs

D

VOUT

D.C.≤ 1%

 

 

 

 

G

 

 

P.G

50Ω

 

2SK2867

 

S

 

 

 

 

120

 

 

 

ID -- VDS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5V

4V

 

 

100

 

 

 

 

 

 

 

 

 

 

mA

80

 

 

 

=10V

 

 

3V

 

 

--

 

 

 

 

 

 

 

 

 

 

 

VGS

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

Current,

60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

2V

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

5

10

15

20

25

30

35

40

45

50

 

 

 

Drain-to-Source Voltage, VDS

-- V

IT02049

 

500

 

 

RDS(on) -- VGS

 

 

 

 

 

 

 

 

 

 

 

Tc=25°C

 

 

 

 

 

 

 

 

 

 

 

-- Ω

450

 

 

 

 

 

 

 

 

 

 

400

 

 

 

 

 

 

 

 

 

 

(on)

350

 

 

 

 

 

 

 

 

 

 

DS

300

 

 

 

 

 

 

 

 

 

 

Source-to-DrainStatic Resistance,State-On R

 

 

 

 

 

 

 

 

 

 

250

 

 

 

 

I

=30mA

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

200

 

 

 

 

 

 

 

15mA

 

 

 

150

 

 

 

 

 

 

 

1mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

2

4

6

8

10

12

14

16

18

20

 

 

 

Gate-to-Source Voltage, VGS

-- V

IT02051

Zero-Gate Voltage Drain Current, IDS(on) -- mA

On-State Resistance, RDS(on) -- Ω

Static Drain-to-Source

70

60

50

40

30

20

10

0

0 2

500

400

300

200

100

0

 

--50

--25

IDS(on) -- VGS

Tc=--25°

V

DS

=10V

C

 

25°C

 

 

 

75°C

 

 

 

4

6

8

10

12

14

16

18

20

Gate-to-Source Voltage, VGS

-- V

IT02050

 

 

RDS(on)

-- Tc

 

 

 

 

 

 

 

=4V

 

VGS

=15mA,

 

=10V

ID

 

VGS

 

=15mA,

 

ID

 

 

0

25

50

75

100

125

150

Case Temperature, Tc

-- °C

IT02052

 

 

 

 

 

No.6617-2/4

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