SANYO 2SK2864 Datasheet

2SK2864

No.6610-1/4

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• Enables simplified fabrication, high-density mounting,

and miniaturization in end products due to the surface
mountable package.

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage V

DSS

200 V

Gate-to-Source Voltage V

GSS

±20 V

Drain Current (DC) I

D

20 A

Drain Current (Pulse) I

DP

PW≤10µs, duty cycle≤1% 80 A

Allowable Power Dissipation P

D

Tc=25°C50W
Channel T emperature Tch 150 °C
Storage T emperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions

min typ max

Unit

Drain-to-Source Breakdown Voltage V

(BR)DSSID

=1mA, VGS=0 200 V

Gate-to-Source Breakdown Voltage V

(BR)GSSIG

=±100µA, VDS=0 ±20 V

Zero-Gate Voltage Drain Current I

DSS

VDS=200V, VGS=0 100 µA
Gate-to-Source Leakage Current I

GSS

VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 4.0 V
Forward Transfer Admittance



yfs



VDS=10V, ID=10A 6 10 S
Static Drain-to-Source On-State Resistance RDS(on) ID=10A, VGS=10V 90 120 mΩ

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6610

2SK2864

Package Dimensions

unit : mm

2128

[2SK2864]

13001 TS IM TA-3092

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

1 : Gate
2 : Source
3 : Drain

SANYO : ZP

6.2

7.8

8.2

0.2

0.4

4.2

1.0

1.0

5.08

2.54

2.54

8.4

10.0

1.2

0.3

0.6

0.6

0.7

7.8

5.2

6.2

10.0

6.0

2.5

1

2

3

Ultrahigh-Speed Switching Applications

2SK2864

No.6610-2/4

Drain-to-Source V oltage, VDS -- V

Drain Current, I

D

-- A

Case Temperature, Tc -- °C

RDS(on) -- Tc

Static Drain-to-Source

On-State Resistance, R

DS

(on) -- mΩ

Static Drain-to-Source

On-State Resistance, R

DS

(on) -- mΩ

Gate-to-Source V oltage, VGS -- V

RDS(on) -- V

GS

Gate-to-Source V oltage, VGS -- V

ID -- V

GS

Drain Current, I

D

-- A

ID -- V

DS

012345678

IT01918 IT01919

Tc=25°C
ID=10A

0 2 4 6 8 10121416

200

160

120

80

40

180

140

100

60

IT01920

--60

--40

--20 0 20 40 60 80 100 120

250

200

150

100

50

0

140 160

IT01921

20

18

16

14

12

10

8

6

4

2

012345

0

20

18

16

14

12

10

8

6

4

2
0

VGS=4V

5V

6V

8V

10V

15V

--25°C

25°C

Tc=75°C

VDS=10V

VGS=10V
ID=10A

Continued from preceding page.

Ratings

Parameter Symbol Conditions

min typ max

Unit

Input Capacitance

Ciss1 VDS=0, f=1MHz 3000 3800 pF

Ciss2 VDS=20V , f=1MHz 1700 2150 pF
Output Capacitance Coss VDS=20V , f=1MHz 400 420 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 150 185 pF
Turn-ON Delay Time td(on) See specified Test Circuit 28 35 ns
Rise Time t

r

See specified Test Circuit 85 110 ns
Turn-OFF Delay Time td(off) See specified Test Circuit 130 165 ns
Fall Time t

f

See specified Test Circuit 90 105 ns
Diode Forward Voltage V

SD

IS=20A, VGS=0 1.0 1.5 V
Gate resistance Rg f=1MHz 1.0 2.0 3.0 Ω

Switching Time Test Circuit

PW=10µs
D.C.≤1%

10V

0V

P.G

50Ω

G

S

D

ID=10A
RL=10Ω

VDD=100V

V

OUT

2SK2864

V

IN

V

IN