SANYO 2SK2859 Datasheet
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN5851
2SK2859
Features
· Low On resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
Package Dimensions
unit:mm
2149
[2SA2859]
58
0.3
4.4
14
5.0
1.27
0.595
SSD
SSG
WP ≤ elcycytud,sµ01 ≤ %18A
Mounted on a ceramic board (10002×0.8mm)
0.43
1.8max
1.5
0.1
1 : No Contact
6.0
2 : Source
3 : No Contact
4 : Gate
0.2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
001V
51±V
2A
6.1W
˚C
˚C
D1498TS (KOTO) TA-0859 No.5851-1/4
2SK2859
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCffotuCecruoS-ot-niarDI
tnerruCegakaeLecuoS-ot-etaGI
egatloVffotuCecuoS-ot-etaGV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecruoS-ot-niarDcitatS
ecnatsiseRetatS-nO
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
efatloVdrawroFedoiDV
R
R
Switching Time Test Circuit
V
=50V
V
10V
0V
PW=10µs
D.C.≤1%
IN
V
IN
DD
ID=2A
=25Ω
R
L
D
G
V
r
f
SSD
SSG
)no(d
)ffo(d
DS
OUT
SSD)RB(
)ffo(SG
1IDV,A2=
)no(SD
2)no(SD
I
V,Am1=
D
V
SD
V
SG
V
SD
I
D
SD
SD
SD
I
S
0=001V
SG
V,V001=
0=001Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01=
Am1=0.10.2V
D
A2=5.24 S
D
V01=3.04.0
SG
V,A2=
V4=4.055.0
SG
zHM1=f,V02=083Fp
zHM1=f,V02=08Fp
zHM1=f,V02=51Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS07sn
tiucriCtseTdeificepseeS03sn
V,A2=
0=0.12.1V
SG
sgnitaR
nimpytxam
tinU
Ω
Ω
P.G 50Ω
I
10
8
–A
6
D
4
Drain Current,I
2
0
0 2 4 6 8 10
2
fs|–S
10
y
7
5
3
2
1.0
7
5
Forward Transfer Admittance,|
3
2
5 7
GS
V
Drain-to-Source Voltage,VDS–V
0.1 1.0 10
D–VDS
3.6V
4.0V 3.8V
=
|yfs|–I
Tc=–25˚C
2 3 5 7 2 3 5 7
2SK2859
S
2.0V 2.2V
D
VDS=10V
25˚C
75˚C
Drain Current,ID–A
3.4V
3.2V
3.0V
2.8V
2.6V
2.4V
I
8
7
6
5
–A
D
4
3
2
Drain Current,I
1
0
0 1 2 3 4 5 6
0.7
0.6
0.5
(on) – Ω
DS
0.4
0.3
0.2
0.1
Static Drain-to-Source
On-State Resistance,R
0
0 2 4 6 8 10 12 14
Gate-to-Source Voltage,VGS–V
D–VGS
Tc=75˚C
25˚C –25˚C
R
DS(on) –VDS
Gate-to-Source Voltage,VDS–A
VDS=10V
Tc=25˚C
=2A
I
D
No.5851-2/4
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