Sanyo 2SK2682LS Specifications

Page 1
Ordering number : ENN6783A
2SK2682LS
N-Channel Silicon MOSFET
2SK2682LS
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance.
High-speed diode.
Micaless package facilitating mounting.
Package Dimensions
unit : mm
2078C
[2SK2682LS]
10.0
16.1
3.6
123
0.9
0.75
3.2
3.5
7.2
16.0
1.2
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Gate 2 : Drain 3 : Source
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I
Allowable Power Dissipation P Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% 52 A
Tc=25°C35W
2.55
2.55
SANYO : TO-220FI(LS)
250 V ±30 V
13 A
2W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Gate-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
(BR)DSSID (BR)GSSIG
DSS GSS
=1mA, VGS=0 250 V
=±100µA, VGS=0 ±30 V VDS=250V, VGS=0 1.0 mA VGS=±25V, VDS=0 ±10 µA
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / N1500 TS IM TA-3044
No.6783-1/4
Unit
Page 2
2SK2682LS
Continued from preceding page.
Parameter Symbol Conditions
Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on) ID=6A, VGS=10V 200 270 m Input Capacitance Ciss VDS=20V , f=1MHz 1290 pF Output Capacitance Coss VDS=20V , f=1MHz 300 pF Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 125 pF Turn-ON Delay Time td(on) See specified Test Circuit. 22 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit. 320 ns Fall Time t Diode Forward Voltage V Diode Reverse Recovery Time t
yfs
SD
VDS=10V , ID=6A 6 10 S
See specified Test Circuit. 66 ns
r
See specified Test Circuit. 105 ns
f
IS=12A, VGS=0 1.0 1.5 V IS=12A, di/dt=100A/µs 160 ns
rr
min typ max
Marking : K2682
Switching Time Test Circuit
G
VDD=100V
ID=6A RL=16.7
D
V
OUT
V
10V
0V
PW=10µs D.C.1%
IN
V
IN
Ratings
Unit
P.G
20
18
16
14
-- A D
12
10
8
6
Drain Current, I
4
2 0
012345
10V
Drain-to-Source V oltage, V
500
450
400
-- m
350
(on)
DS
300
250
200
150
100
Static Drain-to-Source
On-State Resistance, R
50
0
02468101214161820
RDS(on) -- V
Gate-to-Source V oltage, V
6V
8V
I
D
50
-- V
5V
DS
VGS=3V
DS
GS
GS
2SK2682LS
S
4V
-- V
-- V
I
-- V
20
VDS=10V
18
16
14
-- A D
12
10
8
6
Drain Current, I
4
2 0
IT02616 IT02617
Tc=25°C ID=6A
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Gate-to-Source V oltage, V
500
VGS=10V ID=6A
400
-- m
D
RDS(on) -- Tc
GS
Tc=75°C
--25°C
GS
25°C
-- V
(on)
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
IT02618
--60 --40 --20 0 20 40 60 80 100 120
Case Temperature, Tc -- °C
No.6783-2/4
6.0
160140
IT02619
Page 3
y
fs -- I
100
7 5
3
fs -- S
y
2
10
7 5
3 2
1.0 7
5
Forward Transfer Admittance,
3
23 57 23 57 23
0.1 1.0 10
1000
7 5
3 2
100
7 5
3
Switching Time, SW Time -- ns
2
10
0.1
23 57
Tc= --25°C
75°C
Drain Current, I
SW Time -- I
t
(off)
d
t
f
t
r
t
(on)
d
23 57
1.0
25°C
D
Drain Current, ID -- A
P
-- Ta
2.5
D
D
-- A
D
2SK2682LS
VDS=10V
IT02620
VDD=100V VGS=10V
23
10
IT02622
10000
7 5
3 2
1000
7 5
3 2
100
7
Ciss, Coss, Crss -- pF
5 3
2
10
0 5 10 15 20 25 30
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
Drain-to-Source V oltage, V
100
IDP=52A
7 5
3 2
ID=13A
-- A
10
7
D
5 3
2
1.0 7
Drain Current, I
5 3
2
Tc=25°C Single pulse
0.1
23 57
0.1
Operation in this area is limited by RDS(on).
1.0
A S O
DC operation
23 571023 57 23 57
Drain-to-Source V oltage, V
P
-- Tc
40
D
DS
-- V
DS
<10µs
1ms
10ms
100ms
100 1000
-- V
DS
f=1MHz
IT02621
100µs
IT02623
-- W
2.0
D
1.5
1.0
0.5
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02624
35
-- W D
30
25
20
15
10
5
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT02625
No.6783-3/4
Page 4
2SK2682LS
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject to change without notice.
No.6783-4/4
PS
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