Sanyo 2SK2682LS Specifications

Ordering number : ENN6783A

2SK2682LS

N-Channel Silicon MOSFET

2SK2682LS

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• High-speed diode.

• Micaless package facilitating mounting.

Package Dimensions

unit : mm

2078C

[2SK2682LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

7.2

16.0

1.2

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 52 A

Tc=25°C35W

2.55

2.55

SANYO : TO-220FI(LS)

250 V
±30 V

13 A

2W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Gate-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V

(BR)DSSID
(BR)GSSIG

DSS
GSS

=1mA, VGS=0 250 V

=±100µA, VGS=0 ±30 V
VDS=250V, VGS=0 1.0 mA
VGS=±25V, VDS=0 ±10 µA

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM TA-3431 / N1500 TS IM TA-3044

No.6783-1/4

Unit

2SK2682LS

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=6A, VGS=10V 200 270 mΩ
Input Capacitance Ciss VDS=20V , f=1MHz 1290 pF
Output Capacitance Coss VDS=20V , f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 125 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 22 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 320 ns
Fall Time t
Diode Forward Voltage V
Diode Reverse Recovery Time t

yfs



SD

VDS=10V , ID=6A 6 10 S



See specified Test Circuit. 66 ns

r

See specified Test Circuit. 105 ns

f

IS=12A, VGS=0 1.0 1.5 V
IS=12A, di/dt=100A/µs 160 ns

rr

min typ max

Marking : K2682

Switching Time Test Circuit

G

VDD=100V

ID=6A
RL=16.7Ω

D

V

OUT

V

10V

0V

PW=10µs
D.C.≤1%

IN

V

IN

Ratings

Unit

P.G

20

18

16

14

-- A
D

12

10

8

6

Drain Current, I

4

2
0

012345

10V

Drain-to-Source V oltage, V

500

450

400

-- mΩ

350

(on)

DS

300

250

200

150

100

Static Drain-to-Source

On-State Resistance, R

50

0

02468101214161820

RDS(on) -- V

Gate-to-Source V oltage, V

6V

8V

I

D

50Ω

-- V

5V

DS

VGS=3V

DS

GS

GS

2SK2682LS

S

4V

-- V

-- V

I

-- V

20

VDS=10V

18

16

14

-- A
D

12

10

8

6

Drain Current, I

4

2
0

IT02616 IT02617

Tc=25°C
ID=6A

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Gate-to-Source V oltage, V

500

VGS=10V
ID=6A

400

-- mΩ

D

RDS(on) -- Tc

GS

Tc=75°C

--25°C

GS

25°C

-- V

(on)

DS

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

IT02618

--60 --40 --20 0 20 40 60 80 100 120

Case Temperature, Tc -- °C

No.6783-2/4

6.0

160140

IT02619