SANYO 2SK2631 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6600

2SK2631

N-Channel Silicon MOSFET

2SK2631

Ultrahigh-Speed Switching Applications

Features

•

Low ON resistance.

• Smaller amount of total gate charge.

Package Dimensions

unit : mm

2083B

[2SK2631]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

unit : mm

2092B

[2SK2631]

6.5

5.0

4

1.55.5

0.8

1.5

5.5

1.6

2.3

7.0

7.5

2.3

0.5

0.5

1.2

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

7.0

2.5

0.5

1.2

0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

63000 TS IM TA-3024

No.6600-1/5

2SK2631

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 3 A
Tc=25°C30W

Electrical Characteristics at T a=25 °C

800 V
±30 V

1A

1.0 W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance |yfs| VDS=10V, ID=0.5A 370 740 ms
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=15V 7.5 10 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 300 pF
Output Capacitance Coss VDS=20V , f=1MHz 85 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 40 pF
Total Gate Charge Qg VDS=200V, ID=1A, VGS=10V 8 nC
Turn-ON Delay Time td(on) See specified Test Circuit 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 27 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

r

f

SD

=1mA, VGS=0 800 V
VDS=800V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

See specified Test Circuit 8 ns

See specified Test Circuit 16 ns
IS=1A, VGS=0 0.82 1.2 V

Ratings

min typ max

Marking : K2631

Switching Time Test Circuit

VDD=200V

D

ID=0.5A
RL=400Ω

V

OUT

15V

0V

V

IN

PW=1µs
D.C.≤0.5%

V

IN

Unit

P.G

R

GS

50Ω

G

2SK2631

S

No.6600-2/5