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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6600
2SK2631
N-Channel Silicon MOSFET
2SK2631
Ultrahigh-Speed Switching Applications
Features
•
Low ON resistance.
• Smaller amount of total gate charge.
Package Dimensions
unit : mm
2083B
[2SK2631]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
unit : mm
2092B
[2SK2631]
6.5
5.0
4
1.55.5
0.8
1.5
5.5
1.6
2.3
7.0
7.5
2.3
0.5
0.5
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
63000 TS IM TA-3024
No.6600-1/5
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2SK2631
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 3 A
Tc=25°C30W
Electrical Characteristics at T a=25 °C
800 V
±30 V
1A
1.0 W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance |yfs| VDS=10V, ID=0.5A 370 740 ms
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=15V 7.5 10 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 300 pF
Output Capacitance Coss VDS=20V , f=1MHz 85 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 40 pF
Total Gate Charge Qg VDS=200V, ID=1A, VGS=10V 8 nC
Turn-ON Delay Time td(on) See specified Test Circuit 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 27 ns
Fall Time t
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
r
f
SD
=1mA, VGS=0 800 V
VDS=800V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA
See specified Test Circuit 8 ns
See specified Test Circuit 16 ns
IS=1A, VGS=0 0.82 1.2 V
Ratings
min typ max
Marking : K2631
Switching Time Test Circuit
VDD=200V
D
ID=0.5A
RL=400Ω
V
OUT
15V
0V
V
IN
PW=1µs
D.C.≤0.5%
V
IN
Unit
P.G
R
GS
50Ω
G
2SK2631
S
No.6600-2/5