SANYO 2SK2628LS Technical data

!

Ordering number : ENN7082

2SK2628LS

N-Channel Silicon MOSFET

2SK2628LS

Ultrahigh-Speed Switching Applications

Features

•Low ON-resistance.

•Low Qg.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2078C

[2SK2628LS]

10.0	3.2	4.5
		2.8
3.5	7.2
		16.0

16.1		0.6
3.6	0.9 1.2	1.2

14.0

0.750.7

1 2	3	1	: Gate
	2.4	2	: Drain
		3	: Source
2.55	2.55	SANYO : TO-220FI(LS)

Parameter	Symbol	Conditions			Ratings			Unit
Drain-to-Source Voltage	VDSS					600		V
Gate-to-Source Voltage	VGSS					±30		V
Drain Current (DC)	ID					6		A
Drain Current (Pulse)	IDP					24		A
Allowable Power Dissipation	PD					2.0		W
		Tc=25°C				35		W
Channel Temperature	Tch					150		°C
Storage Temperature	Tstg					--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions			Ratings			Unit
			min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0	600					V
Zero-Gate Voltage Drain Current	IDSS	VDS=600V, VGS=0					1.0	mA
Gate-to-Source Leakage Current	IGSS	VGS=±30V, VDS=0					±100	nA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA	3.5				5.5	V
Forward Transfer Admittance	½yfs½	VDS=10V, ID=4A	2.0		4.0			S
Static Drain-to-Source On-State Resistance	RDS(on)	ID=2A, VGS=15V			0.9		1.1	W
Marking : K2628					Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O2501 TS IM TA-3474 No.7082-1/4

2SK2628LS

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=20V, f=1MHz			1050		pF
Output Capacitance	Coss	VDS=20V, f=1MHz			320		pF
Reverse Transfer Capacitance	Crss	VDS=20V, f=1MHz			180		pF
Total Gate Charge	Qg	VDS=200V, VGS=10V, ID=6A			30		nC
Turn-ON Delay Time	td(on)	See specified Test Circuit.			23		ns
Rise Time	tr	See specified Test Circuit.			35		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			90		ns
Fall Time	tf	See specified Test Circuit.			35		ns
Diode Forward Voltage	VSD	IS=6A, VGS=0			0.85	1.2	V

Switching Time Test Circuit

	PW=1µs			VDD=200V
	D.C.≤ 0.5%
					ID=4A
			VGS=15V		RL=50Ω
				D		VOUT
			G
	P.G		RGS=50Ω		2SK2628LS
				S
	10			ID -- VDS
	9					15V
	8					10V
A	7					8V
--
D	6
I
Current,	5
	4
Drain	3					7V
	2
	1				VGS=6V
	0
	0	2	4	6	8	10	12
			Drain-to-Source Voltage, VDS			-- V	IT03674

	1.4			RDS(on) -- VGS
																		Tc=25°C
Ω	1.3
--
									ID	=6A
(on)	1.2				4A
DS
Source-to-DrainStatic Resistance,State-OnR	1.1
					2A
	1.0
	0.9
	0.8
	0	2	4	6			8		10		12		14		16			18		20
			Gate-to-Source Voltage, VGS												-- V			IT03676

Drain Current, ID -- A

On-State Resistance, RDS(on) -- Ω

Static Drain-to-Source

12									ID -- VGS
	VDS=10V														Tc=		--25°C
10
																		25°C
8
																		75°C
6
4
2
0
0		2			4		6		8		10		12			14		16	18			20
						Gate-to-Source Voltage, VGS												-- V		IT03675
3.0									RDS(on)				-- Tc
2.5
2.0
																=10V
														VGS
1.5												=2A,						=15V
															VGS
												ID
													=2A,
1.0												ID
0.5
0
--50		--25					0		25		50		75					100	125			150
								Case Temperature, Tc --									°C			IT03677
																		No.7082-2/4