SANYO 2SK2628FS Technical data

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Ordering number : ENA1323

2SK2628FS

SANYO Semiconductors

N-Channel Silicon MOSFET

DATA SHEET

2SK2628FS

General-Purpose Switching Device
Applications

Features

• Low ON-reisitance.

• Low Qg.

• Ultrahigh-speed switching.

Specifi cations

Absolute Maximum Ratings

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V

Drain Current (DC)
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150

Storage Temperature Tstg --55 to +150
Avalanche Energy (Single Pulse) *4 E
Avalanche Current *5 I

Note : *1 Shows chip capability

2 Package limited

*

3 SANYO’s condition is radiation from backside.

*

The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.

4 VDD=50V, L=5mH, IAV=6A

*

5 L≤5mH, Single pulse

*

Marking : K2628

at Ta=25°C

DSS
GSS

IDc*1 Limited only by maximum temperature 7 A
I

*2

Dpack
DP

D

AS

AV

Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1% 24 A

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

600 V
±30 V

6.2 A

2.0 W
35 W

°

°

98 mJ

6A

C
C

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.

www.semiconductor-sanyo.com/network

O2208QB MS IM TC-00001661

No. A1323-1/5

2SK2628FS

Electrical Characteristics

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=4A 2.0 4.0 S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage

at T a=25°C

Ratings

min typ max

(BR)DSSID

VDS=480V, VGS=0V 1.0 mA

DSS
GSS

RDS(on) ID=2A, VGS=15V 0.9 1.1
Ciss VDS=20V, f=1MHz 1050 pF
Coss VDS=20V, f=1MHz 320 pF
Crss VDS=20V, f=1MHz 180 pF
td(on) See specifi ed Test Circuit. 23 ns
tr See specifi ed Test Circuit. 35 ns
td(off) See specifi ed Test Circuit. 90 ns
t

f

Qg VDS=200V, VGS=10V, ID=6A 30 nC
V

SD

=10mA, VGS=0V 600 V

VGS=±30V, VDS=0V ±100 nA

See specifi ed Test Circuit. 35 ns

IS=6A, VGS=0V 0.85 1.2 V

Package Dimensions

unit : mm (typ)
7528-001

10.16

3.18

4.7

2.54

Unit

Ω

15.8

3.23

1.47 MAX

3.3

0.8

123

15.8712.98

6.68

0.5

2.76

1 : Gate
2 : Drain
3 : Source

2.54 2.54

SANYO : TO-220F-3FS

Switching Time Test Circuit Avalanche Resistance Test Circuit

VDD=200V

ID=4A

PW=1μs
D.C.≤0.5%

VGS=15V

RL=50Ω

V

D

G

OUT

15V

0V

≥50Ω
RG

2SK2628FS

50Ω

L

V

DD

P.G

R

GS

50Ω

S

2SK2628FS

No. A1323-2/5