SANYO 2SK2628FG Technical data
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Ordering number : ENA1322
2SK2628FG
SANYO Semiconductors
N-Channel Silicon MOSFET
DATA SHEET
2SK2628FG
General-Purpose Switching Device
Applications
Features
• Low ON-reisitance.
• Low Qg.
• Ultrahigh-speed switching.
Specifi cations
Absolute Maximum Ratings
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC)
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel Temperature Tch 150
Storage Temperature Tstg --55 to +150
Avalanche Energy (Single Pulse) *4 E
Avalanche Current *5 I
Note : *1 Shows chip capability
2 Package limited
*
3 SANYO’s condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 VDD=50V, L=5mH, IAV=6A
*
5 L≤5mH, Single pulse
*
Marking : K2628
at Ta=25°C
DSS
GSS
IDc*1 Limited only by maximum temperature 7 A
I
*2
Dpack
DP
D
AS
AV
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1% 24 A
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
600 V
±30 V
6.2 A
2.0 W
35 W
°
°
98 mJ
6A
C
C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
O2208QB MS IM TC-00001662
No. A1322-1/6
2SK2628FG
Electrical Characteristics
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance | yfs | VDS=10V, ID=4A 2.0 4.0 S
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Diode Forward Voltage
at T a=25°C
Ratings
min typ max
(BR)DSSID
VDS=480V, VGS=0V 1.0 mA
DSS
GSS
RDS(on) ID=2A, VGS=15V 0.9 1.1
Ciss VDS=20V, f=1MHz 1050 pF
Coss VDS=20V, f=1MHz 320 pF
Crss VDS=20V, f=1MHz 180 pF
td(on) See specifi ed Test Circuit. 23 ns
tr See specifi ed Test Circuit. 35 ns
td(off) See specifi ed Test Circuit. 90 ns
t
f
Qg VDS=200V, VGS=10V, ID=6A 30 nC
V
SD
=10mA, VGS=0V 600 V
VGS=±30V, VDS=0V ±100 nA
See specifi ed Test Circuit. 35 ns
IS=6A, VGS=0V 0.85 1.2 V
Package Dimensions
unit : mm (typ)
7529-001
10.16
3.18
4.7
2.54
Unit
Ω
15.8
3.23
1.47 MAX
0.8
3.3
123
2.54 2.54
15.8712.98
6.68
0.5
A
2.76
DETAIL-A
( 1.0)
EMC
(0.84)
1 : Gate
FRAME
2 : Drain
3 : Source
SANYO : TO-220F-3SG
Switching Time Test Circuit Avalanche Resistance Test Circuit
VDD=200V
≥50Ω
RG
2SK2628FG
50Ω
PW=1μs
D.C.≤0.5%
VGS=15V
ID=4A
RL=50Ω
V
D
G
OUT
15V
0V
L
V
DD
P.G
R
GS
50Ω
S
2SK2628FG
No. A1322-2/6
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