SANYO 2SK2627 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6228A
2SK2627
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Low Qg.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25°C
Package Dimensions
unit:mm
2128
[2SK2627]
8.2
7.8
0.4
4.2
2.5
6.2
0.2
3
8.4
10.0
1.2
2
1.0
2.54
6.2
1.0
2.54
1
5.08
10.0
6.0
0.6
0.7
0.3
0.6
7.8
5.2
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
006V
03±V
5A
02A
04W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
SD
SD
SD
0=006V
SG
V,V006=
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=5.35.5V
D
A5.2=5.10.3S
D
V,A5.2=
V51=5.10.2
SG
zHM1=f,V02=007Fp
zHM1=f,V02=022Fp
zHM1=f,V02=011Fp
N2000TS (KOTO) TA-2882 No.6228–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
Ω
2SK2627
Continued from preceding page.
retemaraPlobmySsnoitidnoC
egrahCetaGlatoTgQVSDV,V002=
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
)no(d
r
)ffo(d
f
I
V,A5=
DS
S
0=78.02.1V
SG
Switching Time Test Circuit
VDD=200V
V
IN
15V
0V
PW=1µs
D.C.≤0.5%
V
IN
G
D
ID=2.5A
RL=80.0Ω
V
OUT
I,V01=
SG
D
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS52sn
sgnitaR
nimpytxam
A5=02Cn
tinU
P.G
5
4
RGS=50Ω
ID-
V
S
DS
15V
2SK2627
8V
10V
–A
3
D
2
7V
Drain Current, I
1
VGS=6V
0
0246810
Drain-to-Source Voltage, VDS– V Drain-to-Source Voltage, VDS–V
I
-
V
8
VDS=10V
7
6
–A
5
D
4
3
Drain Current, I
2
1
0
024 166 8 10 12 14
D
GS
Tc=
-
25°C
25
75
°C
°C
Gate-to-Source Voltage, VGS–V
10
ID-
V
DS
15V
10V
8
–A
6
D
4
Drain Current, I
2
8V
7V
VGS=6V
0
0 1020304050
y
|
fs |
-
I
25
-
75°C
D
VDS=10V
°C
25°C
75235
10
7
5
fs|–S
y
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
0.1
23
Tc=
7
1.0
Drain Current, ID–A
10
No.6228–2/4
Loading...