SANYO 2SK2625LS Datasheet

Ordering number : ENN7081

Preliminary

2SK2625LS

N-Channel Silicon MOSFET

2SK2625LS

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Low Qg.

Package Dimensions

unit : mm

2078C

[2SK2625LS]

16.1

3.6

10.0

123

0.9

0.75

3.2

3.5

1.2

7.2

2.4

16.0

14.0

4.5

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

Tc=25°C

2.55

2.55

SANYO : TO-220FI(LS)

600 V
±30 V

4A

16 A

2.0 W
30 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on) ID=2.5A, VGS=15V 1.5 2.0 Ω

=1mA, VGS=0 600 V
VDS=600V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

VDS=10V, ID=2.5A 1.5 3.0 S

Marking : K2625 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

O2501 TS IM TA-3475

No.7081-1/4

2SK2625LS

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=20V , f=1MHz 700 pF
Output Capacitance Coss VDS=20V , f=1MHz 220 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 110 pF
Total Gate Charge Qg VDS=200V, ID=5A, VGS=10V 20 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time t
Diode Forward Voltage V

SD

See specified Test Circuit. 20 ns

r

See specified Test Circuit. 25 ns

f

IS=5A, VGS=0 0.88 1.2 V

Switching Time Test Circuit

VDD=200V

Ratings

min typ max

Unit

PW=1µs
D.C.≤0.5%

6

5

4

-- A
D

3

2

Drain Current, I

1

0

0

12 43 5678910

4.0

G

-- V

D

S

DS

P.G

VGS=15V

RGS=50Ω

I

D

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

ID=2.5A
RL=80.0Ω

V

2SK2625LS

10V

15V

VGS=6V

Tc=25°C

OUT

7V

IT03649

8V

8

7

6

-- A

5

D

4

3

Drain Current, I

2

1

0

0

3.5

I

-- V

D

GS

VDS=10V

Tc= --25°C

25°C

75°C

Tc=75°C

25°C

Gate-to-Source V oltage, VGS -- V

--25°C

5101520

IT03650

RDS(on) -- Tc

3.5

3.0

(on) -- Ω

ID=1A

DS

2.5

2.0

1.5

Static Drain-to-Source

On-State Resistance, R

1.0
4

6 8 10 12 14 16 18 20

5A

2.5A

Gate-to-Source V oltage, VGS -- V

IT03651

3.0

2.5

(on) -- Ω

DS

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5

--50

--25 0 25 50 75 100 125 150

=10V

GS

=15V

=2.5A, V

D

GS

=2.5A, V

D

I

I

Case Temperature, Tc -- °C

IT03652

No.7081-2/4