SANYO 2SK2625ALS Technical data
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Ordering number : ENA0359A |
2SK2625ALS |
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
2SK2625ALS General-Purpose Switching Device
Applications
Features
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Low ON-resistance. Low Qg.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Drain-to-Source Voltage |
VDSS |
|
600 |
V |
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Gate-to-Source Voltage |
VGSS |
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±30 |
V |
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Drain Current (DC) |
IDc*1 |
Limited only by maximum temperature |
5 |
A |
|
IDpack*2 |
SANYO’s ideal heat dissipation condition |
4.4 |
A |
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Drain Current (Pulse) |
IDP |
PW≤10 s, duty cycle≤1% |
16 |
A |
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Allowable Power Dissipation |
PD |
|
2.0 |
W |
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Tc=25°C (SANYO’s ideal heat dissipation condition) |
30 |
W |
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Channel Temperature |
Tch |
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150 |
°C |
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Storage Temperature |
Tstg |
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--55 to +150 |
°C |
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Avalanche Energy (Single Pulse) *3 |
EAS |
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87 |
mJ |
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Avalanche Current *4 |
IAV |
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4 |
A |
*1 Shows chip capability
*2 Package limited
*3 VDD=50V, L=10mH, IAV=4A
*4 L≤10mH, single pulse Marking : K2625
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107 TI IM TC-00000530 / 72006QB MS IM TC-00000029 No. A0359-1/5
2SK2625ALS
Electrical Characteristics at Ta=25°C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0V |
600 |
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V |
Zero-Gate Voltage Drain Current |
IDSS |
VDS=600V, VGS=0V |
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1.0 |
mA |
Gate-to-Source Leakage Current |
IGSS |
VGS=±30V, VDS=0V |
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±100 |
nA |
Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
3.5 |
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5.5 |
V |
Forward Transfer Admittance |
yfs |
VDS=10V, ID=2.5A |
1.5 |
3.0 |
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S |
Static Drain-to-Source On-State Resistance |
RDS(on) |
ID=2.5A, VGS=15V |
|
1.5 |
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2.0 |
Ω |
Input Capacitance |
Ciss |
VDS=20V, f=1MHz |
|
700 |
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|
pF |
Output Capacitance |
Coss |
VDS=20V, f=1MHz |
|
220 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=20V, f=1MHz |
|
110 |
|
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pF |
Total Gate Charge |
Qg |
VDS=200V, ID=5A, VGS=10V |
|
20 |
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nC |
Turn-ON Delay Time |
td(on) |
See specified Test Circuit. |
|
20 |
|
|
ns |
Rise Time |
tr |
See specified Test Circuit. |
|
20 |
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ns |
Turn-OFF Delay Time |
td(off) |
See specified Test Circuit. |
|
50 |
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|
ns |
Fall Time |
tf |
See specified Test Circuit. |
|
25 |
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|
ns |
Diode Forward Voltage |
VSD |
IS=5A, VGS=0V |
|
0.88 |
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1.2 |
V |
Package Dimensions |
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Switching Time Test Circuit |
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unit : mm (typ) |
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7509-002 |
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VDD=200V |
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10.0 |
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4.5 |
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ID=2.5A |
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3.2 |
2.8 |
PW=1 s |
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RL=80.0Ω |
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3.5 |
7.2 |
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D.C.≤0.5% |
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VGS=15V |
D |
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VOUT |
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1 |
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16.0 |
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G |
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. |
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16 |
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0.6 |
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3.6 |
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0.9 |
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P.G |
RGS=50Ω |
S |
2SK2625ALS |
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1.2 |
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1.2 |
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0.75 |
14.0 |
0.7 |
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1 |
2 |
3 |
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1 : Gate |
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2.4 |
2 : Drain |
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3 : Source |
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2.55 |
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2.55 |
SANYO : TO-220FI(LS) |
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Avalanche Resistance Test Circuit
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L |
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≥50Ω |
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RG |
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15V |
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2SK2625ALS |
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50Ω |
VDD |
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0V |
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No. A0359-2/5
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