SANYO 2SK2624LS Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5404B

2SK2624LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

4.5

Features

· Low ON-resistance.

· Low Qg.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PD

PW≤10µs, duty cycle≤1%
Tc=25˚C

Package Dimensions

unit:mm

2078B

[2SK2624LS]

10.0

3.2

16.1

3.6

123

3.5

7.2

0.9

1.2

0.75

2.4

2.552.55

16.0

14.0

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source
SANYO : TO220FI-LS

006V
03±V
3A
21A

0.2W
52W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

SSD
SSG

SG

SD

I

SSD)RB(

D

V

SD

V

SG

)ffo(VSDI,V01=

)no(VSGI,V51=

SD
SD
SD

V,Am1=

0=006V

SG

V,V006=

0=0.1Am

SG

V,V03±=

0=001±An

SD

Am1=5.35.5V

D

A8.1=0.10.2S

D

A8.1=0.26.2

D

zHM1=f,V02=055Fp
zHM1=f,V02=561Fp
zHM1=f,V02=58Fp

N2000TS (KOTO) TA-2884 No.5404–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

Ω

2SK2624LS

Continued from preceding page.

retemaraPlobmySsnoitidnoC

egrahCetaGlatoTgQVSDV,V002=

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A3=

DS

S

0=89.02.1V

SG

Switching Time Test Circuit

VDD=200V

ID=1.8A

RL=111Ω

V

2SK2624LS

OUT

PW=1µs
D.C.≤0.5%

P.G

VGS=15V

G

R

GS

50Ω

D

S

I,V01=

SG

D

tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS22sn

sgnitaR

nimpytxam

A3=51Cn

tinU

4.0

3.5

3.0

–A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

4.0

3.5

– Ω

3.0

(on)

DS

2.5

2.0

1.5

Static Drain-to-Source

On-State Resistance, R

1.0
0

24 810613 795

Drain-to-Source Voltage, VDS–V

Gate-to-Source Voltage, V

I

-- V

D

DS

RDS(on) -- V

82122014 16 186104

8V

VGS=6V

GS

ID=3.0A

1.8A

1.0A

–V

GS

I

-- V

D

=1.8A, V

I

D

=1.8A, V

I

D

50--25 15025 75 100 1250

GS

Tc=--25°C

25°C

75°C

=10V

GS

=15V

GS

5.0

VDS=10V

15V

10V

7V

IT01020 IT01021

Tc=25°C

IT01022

4.5

4.0

3.5

–A

D

3.0

2.5

2.0

1.5

Drain Current, I

1.0

0.5
00

0

2 6 12 14 16 18108204

Gate-to-Source Voltage, VGS–V

7.0

6.5

6.0

5.5

– Ω

5.0

4.5

(on)

DS

4.0

3.5

3.0

2.5

2.0

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5
0

--5 0

RDS(on) -- Tc

Case Temperature, Tc – ˚C

IT01023

No.5404–2/4