SANYO 2SK2624ALS Technical data
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Ordering number : ENA0362A
2SK2624ALS
SANYO Semiconductors
N-Channel Silicon MOSFET
DATA SHEET
2SK2624ALS
General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• Low Qg.
• Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 E
Avalanche Current *2 I
*1 VDD=50V, L=10mH, IAV=3A
*2 L≤10mH, single pulse
DSS
GSS
D
DP
D
AS
AV
PW≤10µs, duty cycle≤1% 12 A
Tc=25°C25W
600 V
±30 V
3.5 A
2.0 W
49 mJ
3A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Marking : K2624 Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
'
customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
(BR)DSSID
DSS
GSS
=1mA, VGS=0V 600 V
VDS=600V, VGS=0V 1.0 mA
VGS=±30V , VDS=0V ±100 nA
min typ max
Ratings
'
s products or
Unit
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22107 TI IM TC-00000529 / 72006QB MS IM TC-00000028
No. A0362-1/5
2SK2624ALS
Continued from preceding page.
Parameter Symbol Conditions
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 550 pF
Output Capacitance Coss VDS=20V , f=1MHz 165 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 85 pF
Total Gate Charge Qg VDS=200V, ID=3A, VGS=10V 15 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 40 ns
Fall Time t
Diode Forward Voltage V
yfs
RDS(on) ID=1.8A, VGS=15V 2.0 2.6 Ω
SD
VDS=10V, ID=1.8A 1.0 2.0 S
See specified Test Circuit. 17 ns
r
See specified Test Circuit. 22 ns
f
IS=3A, VGS=0V 0.98 1.2 V
min typ max
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7509-002
Ratings
VDD=200V
Unit
16.0
14.0
4.5
2.8
1.2
0.7
1 : Gate
2 : Drain
16.1
3.6
10.0
123
0.9
1.2
0.75
3.2
3.5
7.2
2.4
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Avalanche Resistance Test Circuit
≥50Ω
RG
0.6
L
PW=1µs
D.C.≤0.5%
P.G
VGS=15V
R
GS
50Ω
ID=1.8A
RL=111Ω
V
D
G
S
OUT
2SK2624ALS
15V
0V
50Ω
2SK2624ALS
V
DD
No. A0362-2/5
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