Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6148A
2SK2623
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Low Qg.
Package Dimensions
unit:mm
2083B
[2SK2623]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
2.3
1.5
5.5
1.6
0.5
7.0
1.2
7.5
0.5
2092B
[2SK2623]
6.5
5.0
1.55.5
2.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
81000TS (KOTO) TA-2287 No.6148–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK2623
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
egrahCetaGlatoTgQVSDV,V002=
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
Marking : K2623
SSD
SSG
D
PD
D
Tc=25˚C
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
SD
V
SG
V
)ffo(SG
SD
V
)no(SD
SG
SD
SD
SD
)no(d
)ffo(d
I
S
0=006V
SG
V,V006=
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=5.35.5V
D
A8.0=5.00.1S
D
I,V51=
A8.0=2.45.5
D
zHM1=f,V02=003Fp
zHM1=f,V02=09Fp
zHM1=f,V02=54Fp
I,V01=
SG
D
tiucriCtseTdeificepseeS9sn
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS71sn
V,A5.1=
0=8.02.1V
SG
006V
03±V
5.1A
6A
0.1W
03W
sgnitaR
nimpytxam
A5.1=8Cn
˚C
˚C
tinU
Ω
Switching Time Test Circuit
PW=1µs
D.C.≤0.5%
15V
0V
P.G
V
IN
V
IN
G
R
GS
50Ω
VDD=200V
D
S
ID=0.8A
RL=250Ω
2SK2623
V
OUT
No.6148–2/4