SANYO 2SK2618LS Technical data
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Features and Applications
• Low ON-state resistance.
• Low Qg
2SK2618LS
N- Channel MOS Silicon FET
Very High-Speed Switching Applications
TENTATIVE
Absolute Maximum Ratings / Ta=25°C
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable power Dissipation
Channel Temperature
Storage Temperature
Electrical Characteristics / Ta=25°C
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source
on State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-ON Delay Time
Rise Time
Turn-oFF Delay Time
Fall Time
Diode Forward Voltage
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
(Tc=25°C)
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
Qg
td(on)
tr
td(off)
tf
VSD
ID=1mA , VGS=0
VDS=500V , VGS=0
VGS=±30V , VDS=0
VDS=10V , ID=1mA
VDS=10V , ID=3A
ID=3A , VGS=15V
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=20V , f=1MHz
VDS=200V , ID=5A
GS=10V
See Specified Test
Circuit
IS =5A , VGS = 0
unit
500
±30
5
20
30
150
--55 to +150
V
V
A
A
W
°C
°C
min typ max unit
500
3.5
1.5
3.0
0.95
700
250
120
20
20
20
50
25
1.0
±100
5.5
1.25
1.2
V
mA
nA
V
S
Ω
pF
pF
pF
nC
ns
ns
ns
ns
V
Switching Time Test Circuit
VDD=200V
PW=1µS
D.C.≤0.5%
P.G
VGS=15V
G
RGS
50Ω
D
ID=3A
RL=66.7
VOUT
2SK2618LS
S
Specifications and information herein are subject to change without notice.
Case Outline
TO-220FI(LS)
(unit:mm)
φ 3.2
16.1
3.6
10.0
123
0.9
1.2
0.75
3.5
7.2
16.0
14.0
2.4
2.552.55
SANYO Electric Co., Ltd. Semiconductor Business Headquarters
TOKYO OFFICE Ttokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN
4.5
2.8
0.6
0.7
960329TM2fXHD
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