SANYO 2SK2618ALS Technical data

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Ordering number : ENA0360A

2SK2618ALS

SANYO Semiconductors

N-Channel Silicon MOSFET

DATA SHEET

2SK2618ALS

General-Purpose Switching Device
Applications

Features

• Low ON-resistance.

•

Low Qg.

•

Ultrahigh-speed switching.

•

Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V

Drain Current (DC)
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *3 E
Avalanche Current *4 I

*1 Shows chip capability
*2 Package limited
*3 VDD=50V, L=10mH, IAV=5A
*4 L≤10mH, single pulse

Marking : K2618

DSS
GSS

IDc*1 Limited only by maximum temperature 6.5 A

I

*2 SANYO’s ideal heat dissipation condition 5.6 A

Dpack

DP

AS

AV

PW≤10µs, duty cycle≤1% 20 A

D

Tc=25°C (SANYO’s ideal heat dissipation condition) 30 W

500 V
±30 V

2.0 W

138 mJ

5A

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the

'

customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

'

s products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22107 TI IM TC-00000528 / 72006QB MS IM TC-00000027

No. A0360-1/4

Electrical Characteristics at Ta=25°C

2SK2618ALS

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 700 pF
Output Capacitance Coss VDS=20V , f=1MHz 250 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 120 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=5A 20 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





RDS(on) ID=3A, VGS=15V 0.95 1.25 Ω

r

f

SD

=1mA, VGS=0V 500 V
VDS=500V, VGS=0V 1.0 mA
VGS=±30V , VDS=0V ±100 nA

VDS=10V, ID=3A 1.5 3.0 S

See specified Test Circuit. 20 ns

See specified Test Circuit. 25 ns
IS=5A, VGS=0V 1.2 V

min typ max

Ratings

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7509-002

VDD=200V

16.0

14.0

4.5

0.7

1.2

2.8

0.6

PW=1µs
D.C.≤0.5%

P.G

VGS=15V

G

RGS=50Ω

D

ID=3A
RL=66.7Ω

S

V

OUT

2SK2618ALS

16.1

3.6

10.0

0.9

1.2

0.75

3.2

3.5

7.2

Unit

123

2.4

1 : Gate
2 : Drain
3 : Source

2.55

2.55

SANYO : TO-220FI(LS)

Avalanche Resistance Test Circuit

≥50Ω
RG

15V

0V

50Ω

2SK2618ALS

L

V

DD

No. A0360-2/4