SANYO 2SK2616 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN5620B
2SK2616
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Low Qg.
Package Dimensions
unit:mm
2083B
[2SK2616]
0.85
6.5
5.0
4
0.7
0.6
1
23
2.3
1.5
5.5
0.8
1.6
2.3
2.3
7.0
1.2
7.5
0.5
unit:mm
2092B
[2SK2616]
6.5
5.0
1.55.5
2.3
0.5
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
O1899TS (KOTO) TA-0835 No.5620–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK2616
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
egrahCetaGlatoTgQVSDI,V002=
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
SSD
SSG
D
PD
D
Tc=25˚C
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
0=005V
SG
V,V005=
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=5.35.5V
D
A1=55.01.1S
D
V,A1=
V51=0.30.4
SG
zHM1=f,V02=003Fp
zHM1=f,V02=001Fp
zHM1=f,V02=05Fp
V,A2=
D
V,A2=
0=2.1V
SG
SG
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS71sn
005V
03±V
2A
8A
1W
03W
sgnitaR
nimpytxam
V01=8Cn
˚C
˚C
tinU
Ω
Switching Time Test Circuit
V
GS
15V
0V
PW=1µs
D.C.≤0.5%
P.G
VGS=15V
G
R
50Ω
GS
VDD=200V
D
S
ID=1A
RL=200Ω
2SK2616
V
OUT
No.5620–2/4
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