Sanyo 2SK2555 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

DC/DC Converter Applications

Ordering number:ENN5316A

2SK2555

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 4V drive.

Package Dimensions

unit:mm

2083B

[2SK2555]

6.5

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

0.8

1.5

5.5

1.6

7.0

7.5

2.3

0.5

1.2

0.5

unit:mm

2092B

6.5

5.0

[2SK2555]

1.55.5

2.3

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

81000TS (KOTO) TA-0529 No.5316–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK2555

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

SSD
SSG

D

R

SD

R

SD

d

d

WP ≤ elcycytud,sµ01 ≤ %184A

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

V

SSD
SSG

r

f

DS

SD

V

SG

V

)ffo(SG

SD

1)no(IDV,A6=

2)no(IDV,A4=
SD

SD
SD

)no(tiucriCtseTdeificepseeS51sn

)ffo(tiucriCtseTdeificepseeS05sn

I

S

0=03V

SG

V,V03=

0=001Aµ

SG

V,V02±=

0=01±Aµ

SD

I,V01=

Am1=0.15.2V

D

A6=68S

D

V01=6364mΩ

SG

V4=8587mΩ

SG

zHM1=f,V01=056Fp
zHM1=f,V01=084Fp
zHM1=f,V01=09Fp

tiucriCtseTdeificepseeS071sn

tiucriCtseTdeificepseeS54sn

I,V01=

SG

D

I,V01=

SG

D

I,V01=

SG

V,A6=

0=0.12.1V

SG

D

03V
52±V
21A

1W
03W

sgnitaR

nimpytxam

A1=02Cn
A1=3Cn
A1=6Cn

˚C
˚C

tinU

Switching Time Test Circuit

V

10V

0V

PW=10µs
D.C.≤1%

P.G

IN

VDD=15V

V

IN

G

50Ω

ID=6A

RL=2.5Ω

S

V

OUT

2SK2555

D

No.5316–2/4

20

15

–A

D

10

10.0V

5.0V

I

D

-- V

DS

Tc=25°C

4.0V

3.8V

3.6V

3.4V

2SK2555

20

15

–A

D

10

I

D

-- V

GS

VDS=10V

Drain Current, I

5

0

214 810635 97

Drain-to-Source Voltage, VDS–V

120
110
100

ID=4A

90

–mΩ

80

(on)

70

DS

60
50
40
30
20

Static Drain-to-Source

On-State Resistance, R

10

0

0

Gate-to-Source Voltage, VGS–V

2

10

fs|–S

y

7
5

3
2

1.0
7

5

Forward Transfer Admittance, |

3

0.1

5

VDS=15V
VGS=10V

3
2

100

7
5

3
2

Switching Time, SW Time – ns

10

7

0.1

23 577

RDS(on) -- V

6A

82121416610418

y

|

fs

|

Tc= --25

25°C

Drain Current, ID–A

1.0

SW Time -- I

t

f

1.0

Drain Current, ID–A

GS

-

I

D

°C

75°C

225732575

D

t

r

t

(off)

d

td(on)

23 2357

3.2V

3.0V

VGS=2.8V

IT01446 IT01447

Tc=25°C

IT01448

VDS=10V

73

10

IT01450

10

IT01452

Drain Current, I

5

00

0

150
140
130
120

–mΩ

110
100

(on)

90

DS

80
70
60
50
40
30
20

Static Drain-to-Source

On-State Resistance, R

10

0

--60

10

7
5

3

–A

2

S

1.0
7
5

3

Forward Current, I

2

0.1

5
3

2

1000

7
5

3
2

100

7

Ciss, Coss, Crss – pF

5
3

2

10

134562

Gate-to-Source Voltage, VGS–V

0

°C

--25°C

Tc=75

25°C

RDS(on) -- Tc

=4V

GS

=4A, V

I

D

=10V

GS

=6A, V

I

D

°C

Tc=75

0.7 0.8 0.9 1.0 1.1 1.20.60.5

10 15 20 25 305

40--40 --20 12020 60 80 100 1601400

IS -- V

25°C

SD

--25°C

DS

Ciss

Coss

Crss

Case Temperature, Tc – ˚C

Diode Forward Voltage, VSD–V

Ciss, Coss, Crss -- V

Drain-to-Source Voltage, VDS–V

IT01449

VGS=0

IT01451

f=1MHz

IT01453

No.5316–3/4

2SK2555

V

-- Qg

10

VDS=10V

9

ID=1A

V

8

–

GS

7

6

5

4

3

2

Gate-to-Source Voltage, V

1
0

0 2 4 6 8 101214161820

1.2

1.0

–W

D

0.8

0.6

0.4

Total Gate Charge, Qg – nC

GS

P

D

-- Ta

IT01454

100

7

IDP=48A

5

3
2

–A

ID=12A

D

10

,I

7
5

Operation in

3

this area is

Drain Current

–W

D

limited by RDS(on).

2

1.0

Tc=25°C

7

Single pulse

5

35

30

25

20

15

10

A S O

<10µs

100µs

1ms

10ms

DC operation

23 5723 57

1.0

Drain-to-Source Voltage, VDS–V

P

-- Tc

D

10

23 5

IT01455

0.2

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT01480

5

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

IT01456

This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.

PS No.5316–4/4