Sanyo 2SK2555 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN5316A
2SK2555
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2083B
[2SK2555]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
1.5
5.5
1.6
7.0
7.5
2.3
0.5
1.2
0.5
unit:mm
2092B
6.5
5.0
[2SK2555]
1.55.5
2.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
81000TS (KOTO) TA-0529 No.5316–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK2555
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01=
egrahCecruoS-ot-etaGsgQVSDV,V01=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=
egatloVdrawroFedoiDV
SSD
SSG
D
R
SD
R
SD
d
d
WP ≤ elcycytud,sµ01 ≤ %184A
PD
D
Tc=25˚C
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
r
f
DS
SD
V
SG
V
)ffo(SG
SD
1)no(IDV,A6=
2)no(IDV,A4=
SD
SD
SD
)no(tiucriCtseTdeificepseeS51sn
)ffo(tiucriCtseTdeificepseeS05sn
I
S
0=03V
SG
V,V03=
0=001Aµ
SG
V,V02±=
0=01±Aµ
SD
I,V01=
Am1=0.15.2V
D
A6=68S
D
V01=6364mΩ
SG
V4=8587mΩ
SG
zHM1=f,V01=056Fp
zHM1=f,V01=084Fp
zHM1=f,V01=09Fp
tiucriCtseTdeificepseeS071sn
tiucriCtseTdeificepseeS54sn
I,V01=
SG
D
I,V01=
SG
D
I,V01=
SG
V,A6=
0=0.12.1V
SG
D
03V
52±V
21A
1W
03W
sgnitaR
nimpytxam
A1=02Cn
A1=3Cn
A1=6Cn
˚C
˚C
tinU
Switching Time Test Circuit
V
10V
0V
PW=10µs
D.C.≤1%
P.G
IN
VDD=15V
V
IN
G
50Ω
ID=6A
RL=2.5Ω
S
V
OUT
2SK2555
D
No.5316–2/4
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