SANYO 2SK2530 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6406
2SK2530
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· Low voltage drive.
Package Dimensions
unit:mm
2083B
[2SK2530]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
2.3
1.5
5.5
1.6
0.5
7.0
1.2
7.5
0.5
2092B
[2SK2530]
6.5
5.0
1.55.5
2.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
92500TS (KOTO) TA-2182 No.6406–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK2530
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
emiTyrevoceResreveRedoiDt
Marking : K2530
SSD
SSG
D
d
d
WP ≤ elcycytud,sµ01 ≤ %18A
PD
D
Tc=25˚C
I
V,Am1=
SSD)RB(
D
I
SSG)RB(
G
V
SSD
SSG
r
f
DS
rr
SD
V
SG
V
)ffo(SG
SD
V
)no(SD
SG
SD
SD
SD
)no(tiucriCtseTdeificepseeS01sn
)ffo(tiucriCtseTdeificepseeS08sn
I
S
I
S
0=052V
SG
V,Aµ001±=
0=03±V
SG
V,V052=
0=0.1Am
SG
V,V52±=
0=01±Aµ
SD
I,V01=
Am1=0.20.3V
D
A1=3.19.1S
D
I,V01=
A1=5.10.2
D
zHM1=f,V02=061Fp
zHM1=f,V02=04Fp
zHM1=f,V02=51Fp
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS03sn
V,A2=
0=0.15.1V
SG
sµ/Aµ001=td/id,A2=09sn
sgnitaR
nimpytxam
052V
03±V
2A
1W
02W
˚C
˚C
tinU
Ω
Switching Time Test Circuit
V
10V
0V
PW=10µs
D.C.≤1%
P.G
IN
VDD=100V
V
IN
G
50Ω
D
ID=1A
RL=100Ω
S
V
OUT
2SK2530
No.6406–2/4
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