Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching,
Motor Driver Applications
Ordering number:ENN5251
2SK2406
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· High-speed diode.
Package Dimensions
unit:mm
2083B
[2SK2406]
0.85
6.5
5.0
4
0.7
0.6
1
23
2.3
1.5
5.5
0.8
1.6
2.3
2.3
0.5
7.0
1.2
7.5
0.5
unit:mm
2092B
[2SK2406]
6.5
5.0
1.55.5
2.3
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
82599TH (KT)/40196TS (KOTO) TA-0326 No.5251–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK2406
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
emiTesreveRedoiDt
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25°C
I
SSD)RB(
D
V
SSD
SSG
r
f
DS
rr
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
SD
SD
SD
)no(d
)ffo(d
I
S
I
S
V,Am1=
0=054V
SG
V,V054=
0=1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=0.20.3V
D
A5.0=4.08.0S
D
V,A5.0=
V01=5.35.4
SG
zHM1=f,V02=003Fp
zHM1=f,V02=04Fp
zHM1=f,V02=8Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS9sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS05sn
V,A1=
0=8.02.1V
SG
sµ/A001=td/id,A1=08021sn
sgnitaR
nimpytxam
054V
03±V
1A
4A
1W
03W
˚C
˚C
tinU
Ω
Switching Time Test Circuit
No.5251–2/4