Sanyo 2SK2406 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching,
Motor Driver Applications
Ordering number:ENN5251
2SK2406
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· High-speed diode.
Package Dimensions
unit:mm
2083B
[2SK2406]
0.85
6.5
5.0
4
0.7
0.6
1
23
2.3
1.5
5.5
0.8
1.6
2.3
2.3
0.5
7.0
1.2
7.5
0.5
unit:mm
2092B
[2SK2406]
6.5
5.0
1.55.5
2.3
0.5
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
82599TH (KT)/40196TS (KOTO) TA-0326 No.5251–1/4
1.2
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
2SK2406
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
emiTesreveRedoiDt
SSD SSG
D
PW10µs, duty cycle1%
PD
D
Tc=25°C
I
SSD)RB(
D
V
SSD SSG
r
f
DS
rr
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
SD SD SD
)no(d
)ffo(d
I
S
I
S
V,Am1=
0=054V
SG
V,V054=
0=1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=0.20.3V
D
A5.0=4.08.0S
D
V,A5.0=
V01=5.35.4
SG
zHM1=f,V02=003Fp zHM1=f,V02=04Fp zHM1=f,V02=8Fp
tiucriCtseTdeificepseeS01sn tiucriCtseTdeificepseeS9sn tiucriCtseTdeificepseeS06sn tiucriCtseTdeificepseeS05sn
V,A1=
0=8.02.1V
SG
sµ/A001=td/id,A1=08021sn
sgnitaR
nimpytxam
054V 03±V 1A 4A 1W 03W
˚C ˚C
tinU
Switching Time Test Circuit
No.5251–2/4
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