SANYO 2SK2379 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN5374A

2SK2379

N-Channel Silicon MOSFET

2SK2379

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• Low-voltage drive.

• Micalless package facilitaing mounting.

Specifications

Package Dimensions

unit : mm

2063A

[2SK2379]

10.0

3.2

18.1

5.6

1

2.55

2.55

1.6

23

2.55

1.2

0.75

2.55

3.5

7.2

16.0

14.0

2.4

4.5

2.8

2.4

0.7

1 : Gate
2 : Drain
3 : Source

SANYO : TO-220ML

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage Temperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 80 A

Tc=25°C40W

200 V
±20 V

20 A

2.0 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Gate-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V
Forward Transfer Admittance |yfs| VDS=10V, ID=10A 9.5 16 S

(BR)DSSID
(BR)GSSIG

DSS
GSS

=1mA, VGS=0 200 V

=±100µA, VDS=0 ±20 V
VDS=200V, VGS=0 100 µA
VGS=±16V, VDS=0 ±10 µA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

D2500 TS IM TA-3128

No.5374-1/4

Unit

2SK2379

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance RDS(on) ID=10A, VGS=10V 70 95 mΩ
Input Capacitance Ciss VDS=20V , f=1MHz 2400 pF
Output Capacitance Coss VDS=20V , f=1MHz 500 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 200 pF
Turn-ON Delay Time td(on) See specified Test Circuit 35 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 710 ns
Fall Time t
Diode Forward Voltage V

r

f

SD

See specified Test Circuit 100 ns

See specified Test Circuit 290 ns
IS=20A, VGS=0 1.0 1.5 V

Marking : K2379

Switching Time Test Circuit

VDD=100V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

ID=10A
RL=10Ω

D

V

OUT

Ratings

min typ max

Unit

G

P.G

40

50Ω

ID -- V

S

2SK2379

DS

5.0V

=10.0V

30

GS

V

-- A
D

20

4.0V

3.5V

Drain Current, I

10

3.0V

0

048121620

150

Drain-to-Source V oltage, VDS -- V

RDS(on) -- V

GS

IT01936

Tc=25°C
ID=10A

40

VDS=10V

30

-- A
D

20

Drain Current, I

10

0

023 6541

Gate-to-Source V oltage, VGS -- V

150

VGS=10V
ID=10A

ID -- V

GS

RDS(on) -- Tc

Tc= --25°C

25°C

75°C

IT01937

100

(on) -- mΩ

DS

50

Static Drain-to-Source

On-State Resistance, R

0

Gate-to-Source V oltage, VGS -- V

IT01938

100

(on) -- mΩ

DS

50

Static Drain-to-Source

On-State Resistance, R

0

--80 800 40 160120--40048122 6 10 14

Case Temperature, Tc -- °C

IT01939

No.5374-2/4