Sanyo 2SK2378 Specifications

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN5412B

2SK2378

N-channel Silicon MOSFET

2SK2378

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• Low-voltage drive.

• Micaless package facilitaing mounting.

Specifications

Package Dimensions

unit : mm

2063A

[2SK2378]

10.0

3.2

18.1

5.6

1

2.55

2.55

1.6

1.2

0.75

23

2.55

2.55

3.5

7.2

16.0

14.0

2.4

4.5

2.8

2.4

0.7

1 : Gate
2 : Drain
3 : Source

SANYO : TO-220ML

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation PD
Channel T emperature T ch 150 ° C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

PW≤10µs, duty cycle≤1% 52 A

Tc=25°C30W

200 V
±20 V

13 A

2.0 W

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Gate-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.5 V
Forward Transfer Admittance

(BR)DSSID
(BR)GSSIG

DSS
GSS

yfs





=1mA, VGS=0 200 V

=±100µA, VDS=0 ±20 V
VDS=200V, VGS=0 100 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=7A 5 8.5 S

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Continued on next page.

O1000 TS IM TA-0174

No.5412-1/4

Unit

2SK2378

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance RDS(on) ID=7A, VGS=10V 160 210 mΩ
Input Capacitance Ciss VDS=20V , f=1MHz 1100 pF
Output Capacitance Coss VDS=20V , f=1MHz 240 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 95 pF
Turn-ON Delay Time td(on) See specified Test Circuit 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 340 ns
Fall Time t
Diode Forward Voltage V

r

f

SD

See specified Test Circuit 50 ns

See specified Test Circuit 140 ns
IS=13A, VGS=0 1.0 1.5 V

Marking : K2378

Switching Time Test Circuit

VDD=100V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

D

ID=7A
RL=14.3Ω

V

OUT

Ratings

min typ max

Unit

G

P.G

30

25

50Ω

5.0V

ID -- V

S

DS

2SK2378

=10.0V

20

-- A
D

15

10

GS

V

4.0V

3.5V

Drain Current, I

5

0

048121620

Drain-to-Source V oltage, VDS -- V

0.3

RDS(on) -- V

GS

3.0V

2.5V

IT01929

Tc=25°C
ID=7A

28

VDS=10V

24

20

-- A
D

16

12

8

Drain Current, I

4

0

023 6541

Gate-to-Source V oltage, VGS -- V

0.3

VGS=10V
ID=7A

ID -- V

GS

RDS(on) -- Tc

Tc= --25°C

25°C

75°C

IT01930

(on) -- Ω

0.2

DS

0.1

Static Drain-to-Source

On-State Resistance, R

0

Gate-to-Source V oltage, VGS -- V

IT01931

(on) -- Ω

0.2

DS

0.1

Static Drain-to-Source

On-State Resistance, R

0

--80 800 40 160120--40048122 6 10 14

Case Temperature, Tc -- °C

IT01932

No.5412-2/4