Sanyo 2SK2378 Specifications
Ordering number : ENN5412B
2SK2378
N-channel Silicon MOSFET
2SK2378
Ultrahigh-Speed Switching Applications
Features |
Package Dimensions |
• |
Low ON-resistance. |
unit : mm |
• |
Ultrahigh-speed switching. |
2063A |
•Low-voltage drive.
•Micaless package facilitaing mounting.
10.0
3.2 |
3.5 |
7.2 |
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18.1 |
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5.6 |
1.6 |
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1.2 |
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0.75 |
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1 |
2 |
3 |
2.55 |
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2.55 |
Specifications |
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2.4 |
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2.55 |
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2.55 |
Absolute Maximum Ratings at Ta=25°C |
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[2SK2378]
4.5
2.8 16.0
2.4
14.0 |
0.7 |
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1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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Drain-to-Source Voltage |
VDSS |
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200 |
V |
Gate-to-Source Voltage |
VGSS |
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±20 |
V |
Drain Current (DC) |
ID |
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13 |
A |
Drain Current (Pulse) |
IDP |
PW£10ms, duty cycle£1% |
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52 |
A |
Allowable Power Dissipation |
PD |
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2.0 |
W |
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Tc=25°C |
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30 |
W |
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Channel Temperature |
Tch |
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150 |
°C |
Storage Temperature |
Tstg |
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--55 to +150 °C |
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Electrical Characteristics at Ta=25°C |
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Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0 |
200 |
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V |
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Gate-to-Source Breakdown Voltage |
V(BR)GSS |
IG=±100mA, VDS=0 |
±20 |
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V |
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Zero-Gate Voltage Drain Current |
IDSS |
VDS=200V, VGS=0 |
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100 |
mA |
Gate-to-Source Leakage Current |
IGSS |
VGS=±16V, VDS=0 |
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±10 |
mA |
Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
1.5 |
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2.5 |
V |
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Forward Transfer Admittance |
½yfs½ |
VDS=10V, ID=7A |
5 |
8.5 |
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S |
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Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1000 TS IM TA-0174 No.5412-1/4
2SK2378
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Static Drain-to-Source On-State Resistance |
RDS(on) |
ID=7A, VGS=10V |
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160 |
210 |
mW |
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Input Capacitance |
Ciss |
VDS=20V, f=1MHz |
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1100 |
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pF |
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Output Capacitance |
Coss |
VDS=20V, f=1MHz |
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240 |
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pF |
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Reverse Transfer Capacitance |
Crss |
VDS=20V, f=1MHz |
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95 |
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pF |
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Turn-ON Delay Time |
td(on) |
See specified Test Circuit |
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20 |
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ns |
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Rise Time |
tr |
See specified Test Circuit |
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50 |
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ns |
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Turn-OFF Delay Time |
td(off) |
See specified Test Circuit |
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340 |
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ns |
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Fall Time |
tf |
See specified Test Circuit |
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140 |
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ns |
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Diode Forward Voltage |
VSD |
IS=13A, VGS=0 |
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1.0 |
1.5 |
V |
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Marking : K2378
Switching Time Test Circuit
VDD=100V
VIN
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10V |
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ID=7A |
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0V |
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RL=14.3Ω |
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VIN |
D |
VOUT |
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PW=10µs |
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D.C.≤ 1% |
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G |
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P.G |
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50Ω |
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2SK2378 |
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S |
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30 |
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ID -- VDS |
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25 |
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0V |
.0V |
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=10 |
. |
5 |
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A |
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GS |
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-- |
20 |
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4.0V |
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V |
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D |
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I |
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Current, |
15 |
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3.5V |
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Drain |
10 |
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5 |
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3.0V |
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0 |
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2.5V |
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0 |
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4 |
8 |
12 |
16 |
20 |
Drain-to-Source Voltage, VDS -- V |
IT01929 |
RDS(on) -- VGS |
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0.3
Tc=25°C ID=7A
-- Ω |
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(on) |
0.2 |
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DS |
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DrainStatic-to-Source Resistance,State-On R |
0.1 |
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0 |
0 2 4 6 8 10 12 14
Gate-to-Source Voltage, VGS |
-- V |
IT01931 |
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Drain Current, ID -- A
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
ID -- VGS
28 |
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VDS=10V |
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C |
C |
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° |
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24 |
25 |
25° |
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-- |
75° |
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20 |
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Tc= |
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C |
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16
12
8
4
0
0 |
1 |
2 |
3 |
4 |
5 |
6 |
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Gate-to-Source Voltage, VGS -- V |
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IT01930 |
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0.3 |
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RDS(on) -- Tc |
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VGS=10V |
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ID=7A |
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0.2 |
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0.1
0 |
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--80 |
--40 |
0 |
40 |
80 |
120 |
160 |
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Case Temperature, Tc |
-- °C |
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IT01932 |
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No.5412-2/4 |
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