SANYO 2SK2349 Datasheet

2SK2349

Ordering number : EN5315A

High-Voltage, High-Speed

Switching Applications

N-Channel Silicon MOSFET

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

72597TS (KOTO) TA-1033 No.5315-1/4

Package Dimensions

unit: mm

2131-TO-3JML

[2SK2349]

SANYO: TO-3JML

1 : Gate
2 : Drain
3 : Source

Specifications
Absolute Maximum Ratings

at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage V

DSS

1500 V

Gate-to-Source Voltage V

GSS

±30 V

Drain Current (DC) I

D

10 A

Drain Current (pulse) I

DP

PW≤10µs, duty cycle≤1% 20 A

Allowable Power Dissipation P

D

4.6 W

Tc=25°C 160 W
Channel Temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Ratings

min typ max

Unit

D-S Breakdown Voltage V

(BR)DSSID

=1mA, VGS=0 1500 V

Zero-Gate Voltage Drain Current I

DSS

VDS=1500V, VGS=0 1.0 mA
Gate-to Source Leak Current I

GSS

VGS=±30V, VDS=0 ±100 nA
Cutoff Voltage V

GS(off)

VDS=10V, ID=1mA 1.5 3.5 V
Forward Transfer Admittance |yfs|V

DS

=20V, ID=5A 2.0 4.0 S

Static Drain-to-Source R

DS(on)

ID=5A, VGS=10V 1.5 2.5 Ω
ON-State Resistance
Input Capacitance Ciss VDS=20V, f=1MHz 2900 pF
Output Capacitance Coss VDS=20V, f=1MHz 400 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 200 pF

Continued on next page.

Features

• Low ON resistance, ultrahigh-speed switching.

• High reliability (Adoption of HVP process).

Continued from preceding page.

Parameter Symbol Conditions

Ratings

min typ max

Unit

Turn-ON Delay Time t

d(on)

45 ns

Rise Time t

r

ID=5A, VGS=10V, 150 ns

Turn-OFF Delay Time t

d(off)

VDD=200V, RGS=50Ω 800 ns

Fall Time t

f

200 ns

Diode Forward Voltage V

SD

IS=10A, VGS=0 1.5 V

Reverse Recovery Time t

rr

IS=10A, di/dt=100A/µs 1.0 2.0 µs

Switching Time Test Circuit

2SK2349

No.5315-2/4

25°C

Drain Current, I

D

– ADrain Current, I

D

– A

Drain Current, I

D

– A Drain Current, I

D

– A

Drain-to-Source Voltage, VDS – V Drain-to-Source Voltage, VDS – V

Gate-to-Source Voltage, V

GS

– V

ID-

V

DS

ID-

V

GS

ID-

Tc

6 8 14

-

80

-

40 0 40 80 120 160

10 1242

0

0

4

12

8

16

0

4

8

12

16

20

ID-

V

DS

0 4 8 12 16 20

0

2

8

10

6

4

0

8

12

16

20

4

0 10 20 30 5040

V

GS

=10V

V

GS

=10V

6V

5V

3.5V

4V

4.5V

3V

3V

4V

5V

6V

V

G S

=10V

V

D S

=20V

10V

75°C

VDS=20V

Tc=

-

25°C

Case Temperature, Tc – °C