SANYO 2SK2316 Datasheet
2SK2316
Ordering number : EN5300A
Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) TA-0121 No.5300-1/4
Package Dimensions
unit: mm
2062A-PCP
[2SK2316]
SANYO: PCP
(Bottom View)
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
20 V
Gate-to-Source Voltage V
GSS
±10 V
Drain Current (DC) I
D
2A
Drain Current (Pulse) I
DP
PW≤10µd, duty cycle≤1% 8 A
Allowable Power Dissipation P
D
Mounted on ceramic board 1.5 W
(250mm
2
×0.8mm)
Tc=25°C 3.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
D-S Breakdown Voltage V
(BR)DSS
ID=1mA, VGS=0 20 V
G-S Breakdown Voltage V
(BR)GSS
IG=±100µA, VDS=0 ±10 V
Zero-Gate Voltage I
DSS
VDS=16V, VGS=0 100 µA
Drain Current
Gate-to-Source Leakage Current I
GSS
VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage V
GS(off)
VDS=10V, ID=1mA 0.5 1.5 V
Forward Transfer Admittance
yfs VDS=10V, ID=1A 1.8 2.8 S
Static Drain-to-Source R
DS(on)
ID=1A, VGS=4V 140 200 mΩ
ON-State Resistance R
DS(on)
ID=1A, VGS=2.5V 200 320 mΩ
Input Capacitance Ciss VDS=10V, f=1MHz 170 pF
Output Capacitance Coss VDS=10V, f=1MHz 145 pF
Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 50 pF
Continued on next page.
Features
• Low ON resistance.
• Ultrahigh-speed switching.
• Low-voltage drive (2.5V drive).
Continued from preceding page.
Parameter Symbol Conditions
Ratings
min typ max
Unit
Turn-ON Delay Time t
d(on)
See specified Test Circuit. 15 ns
Rise Time t
r
″ 20 ns
Turn-OFF Delay Time t
d(off)
″ 50 ns
Fall Time t
f
″ 35 ns
Diode Forward Voltage V
SD
IS=2A, VGS=0 1.0 V
Making : KP
Switching Time Test Circuit
2SK2316
No.5300-2/4
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